Abstract
The effect of annealing temperature on the electrical and optical properties of indium zinc oxide (IZO) (In2O3:ZnO = 90:10 wt.%) thin films has been investigated. The IZO thin films were deposited on glass substrates by radio frequency magnetron sputtering and then subjected to annealing in a mixed ambient of air and oxygen at 100, 200 and 300 °C. All the IZO films were found to have amorphous structure. With the increase of the annealing temperature, the carrier concentration decreased and the resistivity increased. The average transmittance of IZO thin films decreased slightly with annealing temperature. Interestingly, a systematic reduction of the optical band-gap from 3.79 eV to 3.67 eV was observed with annealing temperature. The change in optical band-gap was observed to be caused predominantly by Burstein-Moss band-gap widening effect suggesting unusual absence of band narrowing effect. The effects on optical and electrical properties of IZO films have been discussed in detail.
| Original language | English |
|---|---|
| Pages (from-to) | 10062-10065 |
| Number of pages | 4 |
| Journal | Journal of Alloys and Compounds |
| Volume | 509 |
| Issue number | 41 |
| DOIs | |
| Publication status | Published - 2011 Oct 13 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MEST) ( 2010-0019626 , 2010-0026614 , R01-2007-000-11177-0 ).
Keywords
- Annealing temperature
- Burstein-Moss effect
- InZnO
- Optical band gap
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry