Effect of atomic hydrogen on the growth of Ge/Si(100)

Se Jong Kahng; J. Y. Park; K. H. Booh; J. Lee; Y. Khang; Y. Kuk

doi:10.1116/1.580624

Effect of atomic hydrogen on the growth of Ge/Si(100)

Se Jong Kahng, J. Y. Park, K. H. Booh, J. Lee, Y. Khang, Y. Kuk

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Dynamically supplied atomic hydrogen was used for a surfactant growth of Ge on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to ∼1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new "pin holes" are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments.

Original language	English
Pages (from-to)	927-929
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	15
Issue number	3
DOIs	https://doi.org/10.1116/1.580624
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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AU - Kahng, Se Jong

AU - Park, J. Y.

AU - Booh, K. H.

AU - Lee, J.

AU - Khang, Y.

AU - Kuk, Y.

PY - 1997

Y1 - 1997

N2 - Dynamically supplied atomic hydrogen was used for a surfactant growth of Ge on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to ∼1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new "pin holes" are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments.

AB - Dynamically supplied atomic hydrogen was used for a surfactant growth of Ge on a Si(100) surface. The transition from three-dimensional to two-dimensional growth of Ge was observed as the hydrogen flux was increased to ∼1 ML/s in scanning tunneling microscope images. Layer-by-layer growth was successfully achieved up to 5 ML of Ge in the presence of atomic hydrogen. Observed missing dimer rows, irregular trench structures, and new "pin holes" are believed to be the product of strain relieving mechanism. The layer-by-layer growth can be understood both by energetics and kinetic pathway arguments.

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Effect of atomic hydrogen on the growth of Ge/Si(100)

Abstract

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