TY - JOUR
T1 - Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics
AU - Jeong, Byoung Jik
AU - Joung, Mi Ri
AU - Kweon, Sang Hyo
AU - Kim, Jin Seong
AU - Nahm, Sahn
AU - Choi, Ji Won
AU - Hwang, Seong Ju
PY - 2012/6
Y1 - 2012/6
N2 - When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.
AB - When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.
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U2 - 10.1111/j.1551-2916.2012.05222.x
DO - 10.1111/j.1551-2916.2012.05222.x
M3 - Article
AN - SCOPUS:84861838625
SN - 0002-7820
VL - 95
SP - 1811
EP - 1813
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 6
ER -