Abstract
When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.
Original language | English |
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Pages (from-to) | 1811-1813 |
Number of pages | 3 |
Journal | Journal of the American Ceramic Society |
Volume | 95 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2012 Jun |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry