Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics

Byoung Jik Jeong; Mi Ri Joung; Sang Hyo Kweon; Jin Seong Kim; Sahn Nahm; Ji Won Choi; Seong Ju Hwang

doi:10.1111/j.1551-2916.2012.05222.x

Effect of Bi ₂ O ₃ doping on the sintering temperature and microwave dielectric properties of Li Al SiO ₄ ceramics

Byoung Jik Jeong
, Mi Ri Joung
, Sang Hyo Kweon
, Jin Seong Kim
, Sahn Nahm^*
, Ji Won Choi
, Seong Ju Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

When Bi ₂O ₃ was added to LiAlSiO ₄ ceramics, Bi ₁₂SiO ₂₀ secondary phase was formed. Since the melting temperature of Bi ₁₂SiO ₂₀ ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO ₄ ceramics. When 15.0 mol% Bi ₂O ₃ was added, the LiAlSiO ₄ ceramics could be sintered at 900°C, and with 20.0 mol% Bi ₂O ₃ they could even be sintered at 875°C. The 15.0 mol% Bi ₂O ₃-doped LiAlSiO ₄ ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε _r of 4.3, a high Q × f of 62 430 GHz and a small τ _f of -16.21 ppm/ ^oC.

Original language	English
Pages (from-to)	1811-1813
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	95
Issue number	6
DOIs	https://doi.org/10.1111/j.1551-2916.2012.05222.x
Publication status	Published - 2012 Jun

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1111/j.1551-2916.2012.05222.x

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title = "Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics",

abstract = "When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol\% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol\% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol\% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.",

author = "Jeong, \{Byoung Jik\} and Joung, \{Mi Ri\} and Kweon, \{Sang Hyo\} and Kim, \{Jin Seong\} and Sahn Nahm and Choi, \{Ji Won\} and Hwang, \{Seong Ju\}",

year = "2012",

month = jun,

doi = "10.1111/j.1551-2916.2012.05222.x",

language = "English",

volume = "95",

pages = "1811--1813",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics

AU - Jeong, Byoung Jik

AU - Joung, Mi Ri

AU - Kweon, Sang Hyo

AU - Kim, Jin Seong

AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

PY - 2012/6

Y1 - 2012/6

N2 - When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.

AB - When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.

UR - https://www.scopus.com/pages/publications/84861838625

U2 - 10.1111/j.1551-2916.2012.05222.x

DO - 10.1111/j.1551-2916.2012.05222.x

M3 - Article

AN - SCOPUS:84861838625

SN - 0002-7820

VL - 95

SP - 1811

EP - 1813

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 6

ER -

Effect of Bi ₂ O ₃ doping on the sintering temperature and microwave dielectric properties of Li Al SiO ₄ ceramics

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