Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics

Min Han Kim; Young Hun Jeong; Sahn Nahm; Hyo Tae Kim; Hwack Joo Lee

doi:10.1016/j.jeurceramsoc.2005.09.072

Effect of B₂O₃ and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn_1/3 Nb_2/3)O₃ ceramics

Min Han Kim, Young Hun Jeong, Sahn Nahm, Hyo Tae Kim, Hwack Joo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

The B₂O₃ added Ba(Zn_1/3Nb_2/3) O₃ (BBZN) ceramic was sintered at 900 °C. BaB₄ O₇, BaB₂O₄, and BaNb₂ O₆ second phases were found in the BBZN ceramic. Since BaB₄O₇ and BaB₂O₄ second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (ε_r) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τ_f) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B₂ O₃ sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B₂O₅) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of ε_r = 36, Q × f = 19,000 GHz and τ_f = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.

Original language	English
Pages (from-to)	2139-2142
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	26
Issue number	10-11
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2005.09.072
Publication status	Published - 2006

Keywords

Ba(ZnNb)O
Dielectric properties
Microstructure

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2005.09.072

Cite this

@article{2a9f89e64f0346a295842cd8ed5d9911,

title = "Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics",

abstract = "The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.",

keywords = "Ba(ZnNb)O, Dielectric properties, Microstructure",

author = "Kim, {Min Han} and Jeong, {Young Hun} and Sahn Nahm and Kim, {Hyo Tae} and Lee, {Hwack Joo}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology through the Project of International Research of the Science and Technology and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL Project. ",

year = "2006",

doi = "10.1016/j.jeurceramsoc.2005.09.072",

language = "English",

volume = "26",

pages = "2139--2142",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier BV",

number = "10-11",

}

TY - JOUR

T1 - Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3 Nb2/3)O3 ceramics

AU - Kim, Min Han

AU - Jeong, Young Hun

AU - Nahm, Sahn

AU - Kim, Hyo Tae

AU - Lee, Hwack Joo

N1 - Funding Information: This work was supported by the Ministry of Science and Technology through the Project of International Research of the Science and Technology and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL Project.

PY - 2006

Y1 - 2006

N2 - The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.

AB - The B2O3 added Ba(Zn1/3Nb2/3) O3 (BBZN) ceramic was sintered at 900 °C. BaB4 O7, BaB2O4, and BaNb2 O6 second phases were found in the BBZN ceramic. Since BaB4O7 and BaB2O4 second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (εr) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τf) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B2 O3 sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B2O5) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of εr = 36, Q × f = 19,000 GHz and τf = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.

KW - Ba(ZnNb)O

KW - Dielectric properties

KW - Microstructure

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U2 - 10.1016/j.jeurceramsoc.2005.09.072

DO - 10.1016/j.jeurceramsoc.2005.09.072

M3 - Article

AN - SCOPUS:33645535787

SN - 0955-2219

VL - 26

SP - 2139

EP - 2142

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 10-11

ER -