Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

Jong Bong Lim; Dong Hyun Kim; Sahn Nahm; Jong Hoo Paik; Hwack Joo Lee

doi:10.1016/j.materresbull.2005.10.021

Effect of B₂O₃ and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg_1/3Nb_2/3)O₃ ceramics

Jong Bong Lim, Dong Hyun Kim, Sahn Nahm, Jong Hoo Paik, Hwack Joo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

B₂O₃ added Ba(Mg_1/3Nb_2/3)O₃ (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba₂B₂O₅ second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B₂O₃ inhibiting the reaction between B₂O₃ and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (ε_r) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg_1/3Nb_2/3)O₃ + 2.0 mol% B₂O₃ + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Q_xf = 21 500 GHz, ε_r = 31 and temperature coefficient of resonance frequency (τ_f) = 21.3 ppm/°C.

Original language	English
Pages (from-to)	1199-1205
Number of pages	7
Journal	Materials Research Bulletin
Volume	41
Issue number	6
DOIs	https://doi.org/10.1016/j.materresbull.2005.10.021
Publication status	Published - 2006 Jun 15

Keywords

A. Ceramics
A. Electronic materials
C. Electron microscopy
D. Dielectric properties
D. Microstructure

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2005.10.021

Cite this

@article{6d5abb93d46e4db8a176a0984aa3452e,

title = "Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics",

abstract = "B2O3 added Ba(Mg1/3Nb2/3)O3 (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba2B2O5 second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B2O3 inhibiting the reaction between B2O3 and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (εr) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg1/3Nb2/3)O3 + 2.0 mol% B2O3 + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Qxf = 21 500 GHz, εr = 31 and temperature coefficient of resonance frequency (τf) = 21.3 ppm/°C.",

keywords = "A. Ceramics, A. Electronic materials, C. Electron microscopy, D. Dielectric properties, D. Microstructure",

author = "Lim, {Jong Bong} and Kim, {Dong Hyun} and Sahn Nahm and Paik, {Jong Hoo} and Lee, {Hwack Joo}",

note = "Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy through the project of standardization. ",

year = "2006",

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T1 - Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

AU - Lim, Jong Bong

AU - Kim, Dong Hyun

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Lee, Hwack Joo

N1 - Funding Information: This work was supported by the Ministry of Commerce, Industry and Energy through the project of standardization.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - B2O3 added Ba(Mg1/3Nb2/3)O3 (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba2B2O5 second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B2O3 inhibiting the reaction between B2O3 and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (εr) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg1/3Nb2/3)O3 + 2.0 mol% B2O3 + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Qxf = 21 500 GHz, εr = 31 and temperature coefficient of resonance frequency (τf) = 21.3 ppm/°C.

AB - B2O3 added Ba(Mg1/3Nb2/3)O3 (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba2B2O5 second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B2O3 inhibiting the reaction between B2O3 and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (εr) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg1/3Nb2/3)O3 + 2.0 mol% B2O3 + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Qxf = 21 500 GHz, εr = 31 and temperature coefficient of resonance frequency (τf) = 21.3 ppm/°C.

KW - A. Ceramics

KW - A. Electronic materials

KW - C. Electron microscopy

KW - D. Dielectric properties

KW - D. Microstructure

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