Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

Jong Bong Lim; Sahn Nahm; Hyo Tae Kim; Jong Hee Kim; Jong Hoo Paik; Hwack Joo Lee

doi:10.1007/s10832-006-9386-2

Effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of the BaTi₄O₉ ceramics

Jong Bong Lim, Sahn Nahm, Hyo Tae Kim, Jong Hee Kim, Jong Hoo Paik, Hwack Joo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of BaTi₄O₉ ceramics was investigated. The BaTi₄O₉ ceramics were able to be sintered at 975°C when B₂O₃ was added. This decrease in the sintering temperature of the BaTi₄O₉ ceramics upon the addition of B₂O₃ is attributed to the formation of BaB₂O₄ second phase whose melting temperature is around 900°C. The B₂O₃ added BaTi ₄O₉ ceramics alone were not sintered below 975°C, but were sintered at 875°C when CuO was added. The formation of BaCu(B ₂O₅) second phase could be responsible for the decrease in the sintering temperature of the CuO and B₂O₃ added BaTi₄O₉ ceramics. The BaTi₄O₉ ceramics containing 2.0 mol% B₂O₃ and 5.0 mol% CuO sintered at 900°C for 2 h have good microwave dielectric properties of ε_r = 36.3, Q× f = 30,500 GHz and τ_f = 28.1 ppm/°C.

Original language	English
Pages (from-to)	393-397
Number of pages	5
Journal	Journal of Electroceramics
Volume	17
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-006-9386-2
Publication status	Published - 2006 Dec

Keywords

BaCu(BO)
BaTiO
Dielectric properties
Electronic materials
Microstructure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s10832-006-9386-2

Cite this

@article{bb7bcf8117824b6f930485d1e1394ddf,

title = "Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics",

abstract = "The effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of BaTi4O9 ceramics was investigated. The BaTi4O9 ceramics were able to be sintered at 975°C when B2O3 was added. This decrease in the sintering temperature of the BaTi4O9 ceramics upon the addition of B2O3 is attributed to the formation of BaB2O4 second phase whose melting temperature is around 900°C. The B2O3 added BaTi 4O9 ceramics alone were not sintered below 975°C, but were sintered at 875°C when CuO was added. The formation of BaCu(B 2O5) second phase could be responsible for the decrease in the sintering temperature of the CuO and B2O3 added BaTi4O9 ceramics. The BaTi4O9 ceramics containing 2.0 mol% B2O3 and 5.0 mol% CuO sintered at 900°C for 2 h have good microwave dielectric properties of εr = 36.3, Q× f = 30,500 GHz and τf = 28.1 ppm/°C.",

keywords = "BaCu(BO), BaTiO, Dielectric properties, Electronic materials, Microstructure",

author = "Lim, {Jong Bong} and Sahn Nahm and Kim, {Hyo Tae} and Kim, {Jong Hee} and Paik, {Jong Hoo} and Lee, {Hwack Joo}",

note = "Funding Information: Acknowledgment This work was supported by the Ministry of Science and Technology through the Nano-Technology project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL Project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

month = dec,

doi = "10.1007/s10832-006-9386-2",

language = "English",

volume = "17",

pages = "393--397",

journal = "Journal of Electroceramics",

issn = "1385-3449",

publisher = "Springer Netherlands",

number = "2-4",

}

TY - JOUR

T1 - Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Kim, Hyo Tae

AU - Kim, Jong Hee

AU - Paik, Jong Hoo

AU - Lee, Hwack Joo

N1 - Funding Information: Acknowledgment This work was supported by the Ministry of Science and Technology through the Nano-Technology project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL Project. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/12

Y1 - 2006/12

N2 - The effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of BaTi4O9 ceramics was investigated. The BaTi4O9 ceramics were able to be sintered at 975°C when B2O3 was added. This decrease in the sintering temperature of the BaTi4O9 ceramics upon the addition of B2O3 is attributed to the formation of BaB2O4 second phase whose melting temperature is around 900°C. The B2O3 added BaTi 4O9 ceramics alone were not sintered below 975°C, but were sintered at 875°C when CuO was added. The formation of BaCu(B 2O5) second phase could be responsible for the decrease in the sintering temperature of the CuO and B2O3 added BaTi4O9 ceramics. The BaTi4O9 ceramics containing 2.0 mol% B2O3 and 5.0 mol% CuO sintered at 900°C for 2 h have good microwave dielectric properties of εr = 36.3, Q× f = 30,500 GHz and τf = 28.1 ppm/°C.

AB - The effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of BaTi4O9 ceramics was investigated. The BaTi4O9 ceramics were able to be sintered at 975°C when B2O3 was added. This decrease in the sintering temperature of the BaTi4O9 ceramics upon the addition of B2O3 is attributed to the formation of BaB2O4 second phase whose melting temperature is around 900°C. The B2O3 added BaTi 4O9 ceramics alone were not sintered below 975°C, but were sintered at 875°C when CuO was added. The formation of BaCu(B 2O5) second phase could be responsible for the decrease in the sintering temperature of the CuO and B2O3 added BaTi4O9 ceramics. The BaTi4O9 ceramics containing 2.0 mol% B2O3 and 5.0 mol% CuO sintered at 900°C for 2 h have good microwave dielectric properties of εr = 36.3, Q× f = 30,500 GHz and τf = 28.1 ppm/°C.

KW - BaCu(BO)

KW - BaTiO

KW - Dielectric properties

KW - Electronic materials

KW - Microstructure

UR - http://www.scopus.com/inward/record.url?scp=33847240964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847240964&partnerID=8YFLogxK

U2 - 10.1007/s10832-006-9386-2

DO - 10.1007/s10832-006-9386-2

M3 - Article

AN - SCOPUS:33847240964

SN - 1385-3449

VL - 17

SP - 393

EP - 397

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 2-4

ER -