TY - JOUR
T1 - Effect of B2O3 on the sintering condition and microwave dielectric properties of Bi4(SiO4)3 ceramics
AU - Joung, Mi Ri
AU - Kim, Jin Seong
AU - Song, Myung Eun
AU - Paik, Dong Su
AU - Nahm, Sahn
AU - Paik, Jong Hoo
AU - Choi, Byung Hyun
PY - 2008/12
Y1 - 2008/12
N2 - B2O3 was added to Bi4(SiO 4)3 ceramics to aid the densification process at low temperatures (≤900°C). When the B2O3 content was <3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi4(SiO4)3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B 2O3-added Bi4(SiO4)3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of εr=15.6, Q × f=36 281 GHz, and τf=-22 ppm/°C.
AB - B2O3 was added to Bi4(SiO 4)3 ceramics to aid the densification process at low temperatures (≤900°C). When the B2O3 content was <3.0 mol%, a porous microstructure developed for the specimens sintered at 875°C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi4(SiO4)3 ceramics were well sintered even at 875°C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B 2O3-added Bi4(SiO4)3 ceramic sintered at 875°C for 1 h showed good microwave dielectric properties of εr=15.6, Q × f=36 281 GHz, and τf=-22 ppm/°C.
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U2 - 10.1111/j.1551-2916.2008.02819.x
DO - 10.1111/j.1551-2916.2008.02819.x
M3 - Article
AN - SCOPUS:57649215253
SN - 0002-7820
VL - 91
SP - 4165
EP - 4167
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 12
ER -