Effect of capping layer on the crystallization of amorphous CoFeB

Ha Chang Chung; Young Ho Lee; Seong Rae Lee

doi:10.1002/pssa.200777336

Effect of capping layer on the crystallization of amorphous CoFeB

Ha Chang Chung, Young Ho Lee, Seong Rae Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigated the effects of capping layer on the crystallization of amorphous top-CoFeB electrode in the glass/CoFeB/MgO(001)/CoFeB/cap stack. Evolution of texture and crystallization of the top-CoFeB electrode can be affected by the texture and the crystallinity of the capping layer. When the (002)-textured Ru capping layer was used, a (110) texture of CoFeB was developed during annealing at 350°C for 90 min. On the other hand, when the amorphous TiAl capping layer was used, a (002) texture of the CoFeB was developed during crystallization due to MgO (001) texture seeding effect. Consequently, the texture evolution of the amorphous top-CoFeB electrode during annealing could be controlled by the texture and crystallinity of the adjacent capping layer.

Original language	English
Pages (from-to)	3995-3998
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	12
DOIs	https://doi.org/10.1002/pssa.200777336
Publication status	Published - 2007 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.200777336

Cite this

@article{22e5e69cf6274ebb8c5ec574038b96f8,

title = "Effect of capping layer on the crystallization of amorphous CoFeB",

abstract = "We investigated the effects of capping layer on the crystallization of amorphous top-CoFeB electrode in the glass/CoFeB/MgO(001)/CoFeB/cap stack. Evolution of texture and crystallization of the top-CoFeB electrode can be affected by the texture and the crystallinity of the capping layer. When the (002)-textured Ru capping layer was used, a (110) texture of CoFeB was developed during annealing at 350°C for 90 min. On the other hand, when the amorphous TiAl capping layer was used, a (002) texture of the CoFeB was developed during crystallization due to MgO (001) texture seeding effect. Consequently, the texture evolution of the amorphous top-CoFeB electrode during annealing could be controlled by the texture and crystallinity of the adjacent capping layer.",

author = "Chung, {Ha Chang} and Lee, {Young Ho} and Lee, {Seong Rae}",

year = "2007",

month = dec,

doi = "10.1002/pssa.200777336",

language = "English",

volume = "204",

pages = "3995--3998",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "12",

}

TY - JOUR

T1 - Effect of capping layer on the crystallization of amorphous CoFeB

AU - Chung, Ha Chang

AU - Lee, Young Ho

AU - Lee, Seong Rae

PY - 2007/12

Y1 - 2007/12

N2 - We investigated the effects of capping layer on the crystallization of amorphous top-CoFeB electrode in the glass/CoFeB/MgO(001)/CoFeB/cap stack. Evolution of texture and crystallization of the top-CoFeB electrode can be affected by the texture and the crystallinity of the capping layer. When the (002)-textured Ru capping layer was used, a (110) texture of CoFeB was developed during annealing at 350°C for 90 min. On the other hand, when the amorphous TiAl capping layer was used, a (002) texture of the CoFeB was developed during crystallization due to MgO (001) texture seeding effect. Consequently, the texture evolution of the amorphous top-CoFeB electrode during annealing could be controlled by the texture and crystallinity of the adjacent capping layer.

AB - We investigated the effects of capping layer on the crystallization of amorphous top-CoFeB electrode in the glass/CoFeB/MgO(001)/CoFeB/cap stack. Evolution of texture and crystallization of the top-CoFeB electrode can be affected by the texture and the crystallinity of the capping layer. When the (002)-textured Ru capping layer was used, a (110) texture of CoFeB was developed during annealing at 350°C for 90 min. On the other hand, when the amorphous TiAl capping layer was used, a (002) texture of the CoFeB was developed during crystallization due to MgO (001) texture seeding effect. Consequently, the texture evolution of the amorphous top-CoFeB electrode during annealing could be controlled by the texture and crystallinity of the adjacent capping layer.

UR - http://www.scopus.com/inward/record.url?scp=38049108507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049108507&partnerID=8YFLogxK

U2 - 10.1002/pssa.200777336

DO - 10.1002/pssa.200777336

M3 - Article

AN - SCOPUS:38049108507

SN - 1862-6300

VL - 204

SP - 3995

EP - 3998

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 12

ER -

Effect of capping layer on the crystallization of amorphous CoFeB

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this