Effect of chemical element doping and sintering atmosphere on the microwave dielectric properties of barium zinc tantalates

  • J. S. Kim*
  • , J. W. Kim
  • , C. I. Cheon
  • , Y. S. Kim
  • , S. Nahm
  • , J. D. Byun
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    31 Citations (Scopus)

    Abstract

    The microwave dielectric properties, long range ordering (LRO) of Zn/Ta sites, and extra phase formation were studied in Ba(Zn1/3 Ta2/3)O3 ceramics doped with 0-4 mol% BaWO4 under varying sintering conditions. The sintering atmosphere was either air or ZnO-powder muffling. The LRO were analyzed by Rietveld refinement method using X-ray diffraction data. The Q.f values were extremely low for samples prepared under ZnO-muffling regardless of the degrees of LRO. Maximum Q.f values were 160,000-200,000 GHz at 0.5-1.5 mol% BaWO4 doping. The extra phases formed during sintering in air and under ZnO-muffling were analyzed in detail. The air sintered specimens showed Ba7Ta6O22 as a major extra phase accompanied by ZnO-loss; in ZnO-muffled specimens BaWO4 was a dominant extra phase. During the ZnO-loss process point defects in the Zn/O sites could be introduced into BZT.

    Original languageEnglish
    Pages (from-to)2599-2604
    Number of pages6
    JournalJournal of the European Ceramic Society
    Volume21
    Issue number15
    DOIs
    Publication statusPublished - 2001

    Bibliographical note

    Funding Information:
    This work was supported by a grant from the Korea Research Foundation in the 1999 program year. The authors deeply appreciate the support.

    Keywords

    • BZT
    • Cation ordering
    • Extra phase
    • Loss quality
    • ZnO-loss

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'Effect of chemical element doping and sintering atmosphere on the microwave dielectric properties of barium zinc tantalates'. Together they form a unique fingerprint.

    Cite this