Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

Sun young Yea; S. J. Chung; Hyunji Son; D. Y. Shin; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1016/j.ssc.2008.05.037

Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

Sun young Yea, S. J. Chung, Hyunji Son, D. Y. Shin, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.

Original language	English
Pages (from-to)	309-312
Number of pages	4
Journal	Solid State Communications
Volume	147
Issue number	7-8
DOIs	https://doi.org/10.1016/j.ssc.2008.05.037
Publication status	Published - 2008 Aug

Keywords

A. Ferromagentism
A. Semiconductor
D. Anisotropy
E. Planar Hall effect

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2008.05.037

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title = "Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect",

abstract = "We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.",

keywords = "A. Ferromagentism, A. Semiconductor, D. Anisotropy, E. Planar Hall effect",

author = "Yea, {Sun young} and Chung, {S. J.} and Hyunji Son and Shin, {D. Y.} and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

year = "2008",

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doi = "10.1016/j.ssc.2008.05.037",

language = "English",

volume = "147",

pages = "309--312",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

AU - Yea, Sun young

AU - Chung, S. J.

AU - Son, Hyunji

AU - Shin, D. Y.

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2008/8

Y1 - 2008/8

N2 - We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.

AB - We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.

KW - A. Ferromagentism

KW - A. Semiconductor

KW - D. Anisotropy

KW - E. Planar Hall effect

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U2 - 10.1016/j.ssc.2008.05.037

DO - 10.1016/j.ssc.2008.05.037

M3 - Article

AN - SCOPUS:46649099442

SN - 0038-1098

VL - 147

SP - 309

EP - 312

JO - Solid State Communications

JF - Solid State Communications

IS - 7-8

ER -

Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

Abstract

Keywords

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