Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz

J. S. Rieh; M. Khater; A. Jeseph; G. Freeman; D. Ahlgren

doi:10.1049/el:20061645

Effect of collector lateral scaling on performance of high-speed SiGe HBTs with f_T>300GHz

J. S. Rieh, M. Khater, A. Jeseph, G. Freeman, D. Ahlgren

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak f_T and f_max exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect.

Original language	English
Pages (from-to)	1180-1181
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	20
DOIs	https://doi.org/10.1049/el:20061645
Publication status	Published - 2006

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20061645

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title = "Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz",

abstract = "The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect.",

author = "Rieh, {J. S.} and M. Khater and A. Jeseph and G. Freeman and D. Ahlgren",

year = "2006",

doi = "10.1049/el:20061645",

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pages = "1180--1181",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz

AU - Rieh, J. S.

AU - Khater, M.

AU - Jeseph, A.

AU - Freeman, G.

AU - Ahlgren, D.

PY - 2006

Y1 - 2006

N2 - The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect.

AB - The effect of collector lateral scaling on the performance of 300GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect.

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U2 - 10.1049/el:20061645

DO - 10.1049/el:20061645

M3 - Article

AN - SCOPUS:33749346420

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VL - 42

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EP - 1181

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Effect of collector lateral scaling on performance of high-speed SiGe HBTs with f_T>300GHz

Abstract

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