Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S. Nigam; J. Kim; B. Luo; F. Ren; G. Y. Chung; S. J. Pearton; J. R. Williams; K. Shenai; P. Neudeck

doi:10.1016/S0038-1101(02)00273-3

Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S. Nigam, J. Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

SiC rectifiers with an on/off current ratio of 4 × 10⁵ (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, R_ON, was 4.2 mΩ cm², which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (V_B)²/R_ON was as high as 156 MW cm^-2.

Original language	English
Pages (from-to)	57-60
Number of pages	4
Journal	Solid-State Electronics
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(02)00273-3
Publication status	Published - 2003 Jan
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF is partially supported by NSF CTS 1109973. Sterling Semiconductor acknowledges the epi growth from Dr. Heinz Lendenmann (ABB).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(02)00273-3

Cite this

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title = "Effect of contact geometry on 4H-SiC rectifiers with junction termination extension",

abstract = "SiC rectifiers with an on/off current ratio of 4 × 105 (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, RON, was 4.2 mΩ cm2, which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (VB)2/RON was as high as 156 MW cm-2.",

author = "S. Nigam and J. Kim and B. Luo and F. Ren and Chung, {G. Y.} and Pearton, {S. J.} and Williams, {J. R.} and K. Shenai and P. Neudeck",

note = "Funding Information: The work at UF is partially supported by NSF CTS 1109973. Sterling Semiconductor acknowledges the epi growth from Dr. Heinz Lendenmann (ABB).",

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doi = "10.1016/S0038-1101(02)00273-3",

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T1 - Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

AU - Nigam, S.

AU - Kim, J.

AU - Luo, B.

AU - Ren, F.

AU - Chung, G. Y.

AU - Pearton, S. J.

AU - Williams, J. R.

AU - Shenai, K.

AU - Neudeck, P.

N1 - Funding Information: The work at UF is partially supported by NSF CTS 1109973. Sterling Semiconductor acknowledges the epi growth from Dr. Heinz Lendenmann (ABB).

PY - 2003/1

Y1 - 2003/1

N2 - SiC rectifiers with an on/off current ratio of 4 × 105 (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, RON, was 4.2 mΩ cm2, which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (VB)2/RON was as high as 156 MW cm-2.

AB - SiC rectifiers with an on/off current ratio of 4 × 105 (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, RON, was 4.2 mΩ cm2, which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (VB)2/RON was as high as 156 MW cm-2.

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DO - 10.1016/S0038-1101(02)00273-3

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JO - Solid-State Electronics

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Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

Abstract

Bibliographical note

ASJC Scopus subject areas

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