Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S. Nigam, J. Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


SiC rectifiers with an on/off current ratio of 4 × 105 (at 1.5 V/-500 V) were fabricated using junction termination extension (JTE) and dielectric overlap. The reverse breakdown voltage was inversely dependent on contact area and was not a strong function of JTE length up to 40 μm. Similarly, for a given JTE length, the metal overlap did not have a strong influence on breakdown voltage. Oval- and circular-shaped contacts produced larger breakdown voltages than square rectifying contacts. The on-state resistance, RON, was 4.2 mΩ cm2, which is close to the theoretical minimum of these rectifiers using Ni Schottky contacts. The figure-of-merit (VB)2/RON was as high as 156 MW cm-2.

Original languageEnglish
Pages (from-to)57-60
Number of pages4
JournalSolid-State Electronics
Issue number1
Publication statusPublished - 2003 Jan
Externally publishedYes

Bibliographical note

Funding Information:
The work at UF is partially supported by NSF CTS 1109973. Sterling Semiconductor acknowledges the epi growth from Dr. Heinz Lendenmann (ABB).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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