Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S. Nigam, J. Kim, B. Luo, F. Ren, G. Y. Chung, S. J. Pearton, J. R. Williams, K. Shenai, P. Neudeck

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

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