Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

  • S. Nigam
  • , J. Kim
  • , B. Luo
  • , F. Ren*
  • , G. Y. Chung
  • , S. J. Pearton
  • , J. R. Williams
  • , K. Shenai
  • , P. Neudeck
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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