Abstract
This paper reports the effect of controlled growth dynamics, as monitored by in situ optical reflectance, on the microstructure of nonpolar aplane GaN films grown on r-plane sapphire. The mosaic microstructure of a-plane GaN and its anisotropy are evaluated by X-ray rocking curve (XRC) measurements. By inserting a pronounced islanding stage followed by an enhanced lateral growth, pit-free a-plane GaN has been achieved showing an XRC linewidth of -0:18 and -0:3° for on- and off-axes planes, respectively, with only minor anisotropy. The density of basal-plane stacking faults is reduced by -70% as determined by a modified Williamson-Hall X-ray analysis.
Original language | English |
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Article number | 071002 |
Journal | Japanese journal of applied physics |
Volume | 48 |
Issue number | 7 PART 1 |
DOIs | |
Publication status | Published - 2009 Jul |
Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)