Effect of controlled Mn doping on transition of oxygen vacancies in Bi                         2                         Ti                         2                         O                         7                          thin films: An electrochemical study

Leeseung Kang; Hye Lan An; Tae Hyung Kim; Duk Hee Lee; Kyung Soo Park; Basudev Swain; Chan Gi Lee; Sahn Nahm

doi:10.1016/j.apsusc.2016.12.162

Effect of controlled Mn doping on transition of oxygen vacancies in Bi ₂ Ti ₂ O ₇ thin films: An electrochemical study

Leeseung Kang, Hye Lan An, Tae Hyung Kim, Duk Hee Lee, Kyung Soo Park, Basudev Swain, Chan Gi Lee, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Crystalline pyrochlore Bi ₂ Ti ₂ O ₇ (B ₂ T ₂ ) thin films were well formed at 300 °C under 740 mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B ₂ T ₂ films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B ₂ T ₂ film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B ₂ T ₂ (Mn:B ₂ T ₂ ) films. The barrier height between the Pt electrode and the Mn:B ₂ T ₂ film was approximately 1.46 eV, but decreased to 0.51 eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	Applied Surface Science
Volume	415
DOIs	https://doi.org/10.1016/j.apsusc.2016.12.162
Publication status	Published - 2017 Sept 1

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.

Keywords

Bi Ti O
Leakage current mechanism
Metal-insulator-metal capacitor
Pyrochlore

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/j.apsusc.2016.12.162

Cite this

Kang, L., An, H. L., Kim, T. H., Lee, D. H., Park, K. S., Swain, B., Lee, C. G., & Nahm, S. (2017). Effect of controlled Mn doping on transition of oxygen vacancies in Bi ₂ Ti ₂ O ₇ thin films: An electrochemical study. Applied Surface Science, 415, 75-79. https://doi.org/10.1016/j.apsusc.2016.12.162

Effect of controlled Mn doping on transition of oxygen vacancies in Bi ₂ Ti ₂ O ₇ thin films: An electrochemical study. / Kang, Leeseung; An, Hye Lan; Kim, Tae Hyung et al.
In: Applied Surface Science, Vol. 415, 01.09.2017, p. 75-79.

Research output: Contribution to journal › Article › peer-review

Kang, L, An, HL, Kim, TH, Lee, DH, Park, KS, Swain, B, Lee, CG & Nahm, S 2017, 'Effect of controlled Mn doping on transition of oxygen vacancies in Bi ₂ Ti ₂ O ₇ thin films: An electrochemical study', Applied Surface Science, vol. 415, pp. 75-79. https://doi.org/10.1016/j.apsusc.2016.12.162

Kang L, An HL, Kim TH, Lee DH, Park KS, Swain B et al. Effect of controlled Mn doping on transition of oxygen vacancies in Bi ₂ Ti ₂ O ₇ thin films: An electrochemical study. Applied Surface Science. 2017 Sept 1;415:75-79. doi: 10.1016/j.apsusc.2016.12.162

Kang, Leeseung ; An, Hye Lan ; Kim, Tae Hyung et al. / Effect of controlled Mn doping on transition of oxygen vacancies in Bi ₂ Ti ₂ O ₇ thin films : An electrochemical study. In: Applied Surface Science. 2017 ; Vol. 415. pp. 75-79.

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title = "Effect of controlled Mn doping on transition of oxygen vacancies in Bi 2 Ti 2 O 7 thin films: An electrochemical study",

abstract = " Crystalline pyrochlore Bi 2 Ti 2 O 7 (B 2 T 2 ) thin films were well formed at 300 °C under 740 mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B 2 T 2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B 2 T 2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B 2 T 2 (Mn:B 2 T 2 ) films. The barrier height between the Pt electrode and the Mn:B 2 T 2 film was approximately 1.46 eV, but decreased to 0.51 eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.",

keywords = "Bi Ti O, Leakage current mechanism, Metal-insulator-metal capacitor, Pyrochlore",

author = "Leeseung Kang and An, {Hye Lan} and Kim, {Tae Hyung} and Lee, {Duk Hee} and Park, {Kyung Soo} and Basudev Swain and Lee, {Chan Gi} and Sahn Nahm",

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N2 - Crystalline pyrochlore Bi 2 Ti 2 O 7 (B 2 T 2 ) thin films were well formed at 300 °C under 740 mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B 2 T 2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B 2 T 2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B 2 T 2 (Mn:B 2 T 2 ) films. The barrier height between the Pt electrode and the Mn:B 2 T 2 film was approximately 1.46 eV, but decreased to 0.51 eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

AB - Crystalline pyrochlore Bi 2 Ti 2 O 7 (B 2 T 2 ) thin films were well formed at 300 °C under 740 mTorr of oxygen partial pressure using pulsed laser deposition. In order to improve the electrical properties of the dielectric B 2 T 2 films, Mn ions were doped into the films and their influence was investigated. Improvement in electrical behavior, especially leakage current density were revealed via impedance spectroscopy and electrochemical studies. Mn doping at an appropriate level improved the electrical properties of the films by affording extrinsic oxygen vacancies that reduced the number of intrinsic oxygen vacancies acting as electron trap sites at the interface between the Pt electrode and the B 2 T 2 film. Schottky emission was posited as the leakage current mechanism in the 10 mol% Mn doped B 2 T 2 (Mn:B 2 T 2 ) films. The barrier height between the Pt electrode and the Mn:B 2 T 2 film was approximately 1.46 eV, but decreased to 0.51 eV for the non-doped film due to large numbers of intrinsic oxygen vacancies.

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