Effect of crystal thickness of separate confinement heterostructure layers on 1.55-μm loss-coupled dfb laser characteristics

Jae Ho Han; Sung Woong Park

doi:10.1002/crat.200610892

Effect of crystal thickness of separate confinement heterostructure layers on 1.55-μm loss-coupled dfb laser characteristics

Jae Ho Han, Sung Woong Park

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550-nm loss-coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40-nm to 80-nm in both below and above the multi-quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures.

Original language	English
Pages (from-to)	707-712
Number of pages	6
Journal	Crystal Research and Technology
Volume	42
Issue number	7
DOIs	https://doi.org/10.1002/crat.200610892
Publication status	Published - 2007 Jul
Externally published	Yes

Keywords

Distributed feedback lasers
Heterostructure
Quantum well lasers
Semiconductor lasers

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1002/crat.200610892

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abstract = "We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550-nm loss-coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40-nm to 80-nm in both below and above the multi-quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures.",

keywords = "Distributed feedback lasers, Heterostructure, Quantum well lasers, Semiconductor lasers",

author = "Han, {Jae Ho} and Park, {Sung Woong}",

year = "2007",

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AU - Park, Sung Woong

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AB - We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550-nm loss-coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40-nm to 80-nm in both below and above the multi-quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures.

KW - Distributed feedback lasers

KW - Heterostructure

KW - Quantum well lasers

KW - Semiconductor lasers

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ER -

Effect of crystal thickness of separate confinement heterostructure layers on 1.55-μm loss-coupled dfb laser characteristics

Abstract

Keywords

ASJC Scopus subject areas

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