Effect of curing temperature on nano-silver paste ink for organic thin-film transistors

Minseok Kim; Jae Bon Koo; Kang Jun Baeg; Yong Young Noh; Yong Suk Yang; Soon Won Jung; Byeong Kwon Ju; In Kyu You

doi:10.1166/jnn.2012.5639

Effect of curing temperature on nano-silver paste ink for organic thin-film transistors

Minseok Kim^*
, Jae Bon Koo
, Kang Jun Baeg
, Yong Young Noh
, Yong Suk Yang
, Soon Won Jung
, Byeong Kwon Ju
, In Kyu You

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottomcontact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ∼10∼ ³ cm ²/Vs, 0.36 V, and ∼10 ², respectively.

Original language	English
Pages (from-to)	3272-3275
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	4
DOIs	https://doi.org/10.1166/jnn.2012.5639
Publication status	Published - 2012

Keywords

Curing temperature
Nano-silver paste
OTFT
Reverse offset printing

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2012.5639

Cite this

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title = "Effect of curing temperature on nano-silver paste ink for organic thin-film transistors",

abstract = "Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottomcontact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ∼10∼ 3 cm 2/Vs, 0.36 V, and ∼10 2, respectively.",

keywords = "Curing temperature, Nano-silver paste, OTFT, Reverse offset printing",

author = "Minseok Kim and Koo, \{Jae Bon\} and Baeg, \{Kang Jun\} and Noh, \{Yong Young\} and Yang, \{Yong Suk\} and Jung, \{Soon Won\} and Ju, \{Byeong Kwon\} and You, \{In Kyu\}",

year = "2012",

doi = "10.1166/jnn.2012.5639",

language = "English",

volume = "12",

pages = "3272--3275",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "4",

}

TY - JOUR

T1 - Effect of curing temperature on nano-silver paste ink for organic thin-film transistors

AU - Kim, Minseok

AU - Koo, Jae Bon

AU - Baeg, Kang Jun

AU - Noh, Yong Young

AU - Yang, Yong Suk

AU - Jung, Soon Won

AU - Ju, Byeong Kwon

AU - You, In Kyu

PY - 2012

Y1 - 2012

N2 - Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottomcontact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ∼10∼ 3 cm 2/Vs, 0.36 V, and ∼10 2, respectively.

AB - Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottomcontact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ∼10∼ 3 cm 2/Vs, 0.36 V, and ∼10 2, respectively.

KW - Curing temperature

KW - Nano-silver paste

KW - OTFT

KW - Reverse offset printing

UR - https://www.scopus.com/pages/publications/84863315465

U2 - 10.1166/jnn.2012.5639

DO - 10.1166/jnn.2012.5639

M3 - Article

C2 - 22849104

AN - SCOPUS:84863315465

SN - 1533-4880

VL - 12

SP - 3272

EP - 3275

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 4

ER -

Effect of curing temperature on nano-silver paste ink for organic thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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