Abstract
We investigated the effect of nitrogen (N) doping on the threshold voltage of an ovonic threshold switching device using amorphous GeSe. Using the spectroscopic ellipsometry, we found that the addition of N brought about significant changes in electronic structure of GeSe, such as the density of localized states and the band gap energy. Besides, it was observed that the characteristics of OTS devices strongly depended on the doping of N, which could be attributed to those changes in electronic structure suggesting a method to modulate the threshold voltage of the device.
| Original language | English |
|---|---|
| Article number | 042908 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2013 Jul 22 |
Bibliographical note
Funding Information:This research was supported by a grant from Fundamental R&D Program for Core Technology of Materials (grant No. 2MR0900) funded by the Ministry of Trade, Industry and Energy, Republic of Korea. H.-W. Ahn and D. Kim were financially supported by a grant from the Human Resources Development program (grant No. 20124030200120) funded by the Korea Institute of Energy Technology Evaluation and Planning, Republic of Korea. H. Lee and H. Lee acknowledges for the financial support from a grant (grant No. 2012-039969) funded by the National Research Foundation Grant, Republic of Korea.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)