TY - JOUR
T1 - Effect of edge junction isolation on the performance of laser doped selective emitter solar cells
AU - Hallam, Brett
AU - Wenham, Stuart
AU - Lee, Haeseok
AU - Lee, Eunjoo
AU - Lee, Hyunwoo
AU - Kim, Jisun
AU - Shin, Jeoungeun
N1 - Funding Information:
This work was supported by the New & Renewable Energy of Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea government Ministry of Knowledge Economy (no. 20093060010010-12-1-000 ).
PY - 2011/12
Y1 - 2011/12
N2 - The effect of laser and chemical edge junction isolation on electrical performance of industrially manufactured laser doped selective emitter solar cells with light induced plated n-type contacts is investigated in this work. Directly after the formation of the aluminium back surface field, photoluminescence images indicates that laser edge junction isolation causes substantial damage around the perimeter of the cell, extending several millimeters from the laser edge isolation groove. On finished devices, regions of high series resistance are evident around the perimeter, caused by parasitic plating nucleating in the damaged laser grooved region which induce shunting and inhibits further plating taking place in the surrounding regions. The use of chemical edge junction isolation eliminates both of these issues and can result in efficiency gains of more than 2% absolute compared to that fabricated using laser edge isolation, suggesting a far superior method of edge junction isolation for the industrial manufacture of laser doped selective emitter solar cells with light induced plated contacts.
AB - The effect of laser and chemical edge junction isolation on electrical performance of industrially manufactured laser doped selective emitter solar cells with light induced plated n-type contacts is investigated in this work. Directly after the formation of the aluminium back surface field, photoluminescence images indicates that laser edge junction isolation causes substantial damage around the perimeter of the cell, extending several millimeters from the laser edge isolation groove. On finished devices, regions of high series resistance are evident around the perimeter, caused by parasitic plating nucleating in the damaged laser grooved region which induce shunting and inhibits further plating taking place in the surrounding regions. The use of chemical edge junction isolation eliminates both of these issues and can result in efficiency gains of more than 2% absolute compared to that fabricated using laser edge isolation, suggesting a far superior method of edge junction isolation for the industrial manufacture of laser doped selective emitter solar cells with light induced plated contacts.
KW - Edge junction isolation
KW - Laser doping
KW - Light induced plating
KW - Photoluminescence imaging
UR - http://www.scopus.com/inward/record.url?scp=80053593177&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2011.09.001
DO - 10.1016/j.solmat.2011.09.001
M3 - Article
AN - SCOPUS:80053593177
SN - 0927-0248
VL - 95
SP - 3557
EP - 3563
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 12
ER -
