Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films

C. H. Hong, Y. J. Jo, H. A. Kim, I. H. Lee, J. S. Kwak

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

We have investigated the effect of electron beam irradiation as well as insertion of a Ag layer on the electrical and optical properties of the ITO or IZO films. The results show that electron beam irradiation as well as inserting a very thin Ag layer can significantly reduce sheet resistance of the ITO/Ag/ITO and IZO/Ag/IZO films. The electron beam irradiation also increases light transmittance and optical band gap of the ITO/Ag/ITO multilayer films; meanwhile, it has not influence on the transmittance of the IZO/Ag/IZO films. These results can be explained by that In and Zn cation in IZO film have strong tendency to preserve their coordination with oxygen.

Original languageEnglish
Pages (from-to)6829-6833
Number of pages5
JournalThin Solid Films
Volume519
Issue number20
DOIs
Publication statusPublished - 2011 Aug 1
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT ( KI002182 , TFT backplane technology for next generation display).

Keywords

  • Electron beam
  • TCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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