Abstract
We have investigated the effect of electron beam irradiation as well as insertion of a Ag layer on the electrical and optical properties of the ITO or IZO films. The results show that electron beam irradiation as well as inserting a very thin Ag layer can significantly reduce sheet resistance of the ITO/Ag/ITO and IZO/Ag/IZO films. The electron beam irradiation also increases light transmittance and optical band gap of the ITO/Ag/ITO multilayer films; meanwhile, it has not influence on the transmittance of the IZO/Ag/IZO films. These results can be explained by that In and Zn cation in IZO film have strong tendency to preserve their coordination with oxygen.
| Original language | English |
|---|---|
| Pages (from-to) | 6829-6833 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the IT R&D program of MKE/KEIT ( KI002182 , TFT backplane technology for next generation display).
Keywords
- Electron beam
- TCO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry