Effect of extended defects in planar and pixelated CdZnTe detectors

G. S. Camarda, K. W. Andreini, A. E. Bolotnikov, Y. Cui, A. Hossain, R. Gul, K. H. Kim, L. Marchini, L. Xu, G. Yang, J. E. Tkaczyk, R. B. James

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We evaluated a spectroscopy-grade 15×15×7 mm3 CdZnTe (CZT) crystal with a high μτ-product, >10-2 cm 2/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
Publication statusPublished - 2011 Oct 1
Externally publishedYes


  • CZT
  • CdZnTe
  • Detectors
  • Dislocations
  • Extended defects
  • X-ray response maps

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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