Effect of extended defects in planar and pixelated CdZnTe detectors

G. S. Camarda; K. W. Andreini; A. E. Bolotnikov; Y. Cui; A. Hossain; R. Gul; K. H. Kim; L. Marchini; L. Xu; G. Yang; J. E. Tkaczyk; R. B. James

doi:10.1016/j.nima.2010.12.012

Effect of extended defects in planar and pixelated CdZnTe detectors

G. S. Camarda, K. W. Andreini, A. E. Bolotnikov, Y. Cui, A. Hossain, R. Gul, K. H. Kim, L. Marchini, L. Xu, G. Yang, J. E. Tkaczyk, R. B. James

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We evaluated a spectroscopy-grade 15×15×7 mm³ CdZnTe (CZT) crystal with a high μτ-product, >10^-2 cm ²/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.

Original language	English
Pages (from-to)	170-173
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	652
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2010.12.012
Publication status	Published - 2011 Oct 1
Externally published	Yes

Keywords

CZT
CdZnTe
Detectors
Dislocations
Extended defects
X-ray response maps

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2010.12.012

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Camarda, G. S., Andreini, K. W., Bolotnikov, A. E., Cui, Y., Hossain, A., Gul, R., Kim, K. H., Marchini, L., Xu, L., Yang, G., Tkaczyk, J. E., & James, R. B. (2011). Effect of extended defects in planar and pixelated CdZnTe detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 652(1), 170-173. https://doi.org/10.1016/j.nima.2010.12.012

Effect of extended defects in planar and pixelated CdZnTe detectors. / Camarda, G. S.; Andreini, K. W.; Bolotnikov, A. E. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 652, No. 1, 01.10.2011, p. 170-173.

Research output: Contribution to journal › Article › peer-review

Camarda, GS, Andreini, KW, Bolotnikov, AE, Cui, Y, Hossain, A, Gul, R, Kim, KH, Marchini, L, Xu, L, Yang, G, Tkaczyk, JE & James, RB 2011, 'Effect of extended defects in planar and pixelated CdZnTe detectors', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 652, no. 1, pp. 170-173. https://doi.org/10.1016/j.nima.2010.12.012

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abstract = "We evaluated a spectroscopy-grade 15×15×7 mm3 CdZnTe (CZT) crystal with a high μτ-product, >10-2 cm 2/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.",

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AU - Hossain, A.

AU - Gul, R.

AU - Kim, K. H.

AU - Marchini, L.

AU - Xu, L.

AU - Yang, G.

AU - Tkaczyk, J. E.

AU - James, R. B.

N1 - Funding Information: This work was supported by the U.S. Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC, under Contract No. DE-AC02-98CH1-886 with the US Department of Energy. The United States Government retains, and the publisher, by accepting the article for publication, acknowledges, a world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for the United States Government purposes.

PY - 2011/10/1

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N2 - We evaluated a spectroscopy-grade 15×15×7 mm3 CdZnTe (CZT) crystal with a high μτ-product, >10-2 cm 2/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.

AB - We evaluated a spectroscopy-grade 15×15×7 mm3 CdZnTe (CZT) crystal with a high μτ-product, >10-2 cm 2/V, but impaired by microscopic extended defects, such as walls of dislocations, low-angle and sub-grain boundaries, and Te inclusions. First, we evaluated a planar detector fabricated from this crystal using a Micro-scale X-ray Detector Mapping (MXDM) technique. Then, we fabricated from the same crystal a pixel detector to study local non-uniformities of the electric field. The measured X-ray response maps confirmed the presence of non-uniformities in the charge transport, and they showed that the global- and local-distortions of the internal E-field correlated to the extended defects and space-charge buildup on the side surfaces.

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Effect of extended defects in planar and pixelated CdZnTe detectors

Abstract

Keywords

ASJC Scopus subject areas

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