The changes in the conductivity of AlGaN/GaN high electron mobility transistors (HEMT) in response to external strain were investigated. The changes in the conductance were found to roughly linear for a fixed Al mole fraction. An increase in conductivity was observed on applying external tensile strain, while a compressive stress pushed together the GaN atoms reducing the total strain at the interface and the resultant conductivity. The conductance changes of the AlGaN/GaN heterostructures demonstrated their possible application as pressure and strain sensors.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)