Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

B. S. Kang; S. Kim; J. Kim; F. Ren; K. Baik; S. J. Pearton; B. P. Gila; C. R. Abernathy; C. C. Pan; G. T. Chen; J. I. Chyi; V. Chandrasekaran; M. Sheplak; T. Nishida; S. N.G. Chu

doi:10.1063/1.1631054

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

B. S. Kang, S. Kim, J. Kim, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C. C. Pan, G. T. Chen, J. I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, S. N.G. Chu

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Abstract

The changes in the conductivity of AlGaN/GaN high electron mobility transistors (HEMT) in response to external strain were investigated. The changes in the conductance were found to roughly linear for a fixed Al mole fraction. An increase in conductivity was observed on applying external tensile strain, while a compressive stress pushed together the GaN atoms reducing the total strain at the interface and the resultant conductivity. The conductance changes of the AlGaN/GaN heterostructures demonstrated their possible application as pressure and strain sensors.

Original language	English
Pages (from-to)	4845-4847
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1631054
Publication status	Published - 2003 Dec 8
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1631054

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Kang, B. S., Kim, S., Kim, J., Ren, F., Baik, K., Pearton, S. J., Gila, B. P., Abernathy, C. R., Pan, C. C., Chen, G. T., Chyi, J. I., Chandrasekaran, V., Sheplak, M., Nishida, T., & Chu, S. N. G. (2003). Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 83(23), 4845-4847. https://doi.org/10.1063/1.1631054

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title = "Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors",

abstract = "The changes in the conductivity of AlGaN/GaN high electron mobility transistors (HEMT) in response to external strain were investigated. The changes in the conductance were found to roughly linear for a fixed Al mole fraction. An increase in conductivity was observed on applying external tensile strain, while a compressive stress pushed together the GaN atoms reducing the total strain at the interface and the resultant conductivity. The conductance changes of the AlGaN/GaN heterostructures demonstrated their possible application as pressure and strain sensors.",

author = "Kang, {B. S.} and S. Kim and J. Kim and F. Ren and K. Baik and Pearton, {S. J.} and Gila, {B. P.} and Abernathy, {C. R.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and V. Chandrasekaran and M. Sheplak and T. Nishida and Chu, {S. N.G.}",

year = "2003",

month = dec,

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doi = "10.1063/1.1631054",

language = "English",

volume = "83",

pages = "4845--4847",

journal = "Applied Physics Letters",

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T1 - Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

AU - Kang, B. S.

AU - Kim, S.

AU - Kim, J.

AU - Ren, F.

AU - Baik, K.

AU - Pearton, S. J.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Chandrasekaran, V.

AU - Sheplak, M.

AU - Nishida, T.

AU - Chu, S. N.G.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The changes in the conductivity of AlGaN/GaN high electron mobility transistors (HEMT) in response to external strain were investigated. The changes in the conductance were found to roughly linear for a fixed Al mole fraction. An increase in conductivity was observed on applying external tensile strain, while a compressive stress pushed together the GaN atoms reducing the total strain at the interface and the resultant conductivity. The conductance changes of the AlGaN/GaN heterostructures demonstrated their possible application as pressure and strain sensors.

AB - The changes in the conductivity of AlGaN/GaN high electron mobility transistors (HEMT) in response to external strain were investigated. The changes in the conductance were found to roughly linear for a fixed Al mole fraction. An increase in conductivity was observed on applying external tensile strain, while a compressive stress pushed together the GaN atoms reducing the total strain at the interface and the resultant conductivity. The conductance changes of the AlGaN/GaN heterostructures demonstrated their possible application as pressure and strain sensors.

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DO - 10.1063/1.1631054

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Abstract

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