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Effect of Ga and As vacancies on electronic properties of Ga
0.9375
Al
0.0625
As
Su Hwan Kim
, Tae Kyung Lee
, Tae Il Kim
*
,
Sang Kyu Kwak
*
Corresponding author for this work
Research output
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0.9375
Al
0.0625
As'. Together they form a unique fingerprint.
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Keyphrases
Electronic Properties
100%
Density of States
100%
Banded Structure
50%
Valence Band
50%
Density Functional Theory
50%
Structure Density
50%
Fermi Level
50%
Good for
50%
P-type Semiconductor
50%
Direct Band Gap
50%
Ga Vacancy
50%
GaAlAs
50%
Semiconductor Lasers
50%
Al Atom
50%
Number of Atoms
50%
Optical Conductivity
50%
Monovacancy
50%
Indirect Gap
50%
Radiation Wavelength
50%
Chemistry
Electronic Property
100%
Density of State
100%
Band Gap
50%
Valence Band
50%
Fermi Level
50%
Electronic Band Structure
50%
Optical Conductivity
50%
formation
50%
Density Functional Theory
50%
Physics
Density of States
100%
Semiconductor Laser
50%
Density Functional Theory
50%
Conductance
50%
Material Science
Density
100%
Electronic Property
100%
Semiconductor Laser
33%