Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma

Alexander Efremov, Nam Ki Min, Sungihl Kim, Mansu Kim, Sahn Nahm, Kwang Ho Kwon

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


An investigation of the Ba2Ti9O20 (BTO) and Pt thin films etch mechanism in the Cl2/Ar inductively coupled plasma was carried out. It was found that an increase in Ar mixing ratio at fixed gas pressure and input power causes a fast decrease in the BTO etch rate (26.9-1.2 nm/min for 0-100% Ar) while the Pt etch rate increases slightly from 17.4-23.0 nm/min. Langmuir probe diagnostics and zero-dimensional plasma modeling provided the data on plasma parameters, steady-state composition and fluxes of active species on the etched surface. From the model-based analysis of etch kinetics, it was shown that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, where the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low-volatile reaction products. The etch process of Pt appears in the transitional regime and is controlled by the neutral and ion fluxes together.

Original languageEnglish
Pages (from-to)1584-1589
Number of pages6
JournalMicroelectronic Engineering
Issue number7
Publication statusPublished - 2008 Jul

Bibliographical note

Funding Information:
This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R01-2005-000-10289-0).

Copyright 2008 Elsevier B.V., All rights reserved.


  • BaTiO(BTO)
  • Cl/Ar plasma modeling
  • Dissociation
  • Etch mechanism
  • Etch rate
  • Ionization
  • Pt

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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