Effect of Ga2O3 on microstructure and microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics

Jung In Yang; Sahn Nahm; Chang Hack Choi; Hwack Joo Lee; Jae Cheon Kim; Hyun Min Park

doi:10.1143/jjap.41.702

Effect of Ga₂O₃ on microstructure and microwave dielectric properties of Ba(Zn_1/3Ta_2/3)O₃ ceramics

Jung In Yang, Sahn Nahm, Chang Hack Choi, Hwack Joo Lee, Jae Cheon Kim, Hyun Min Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The effect of Ga₂O₃ on the microstructure and microwave dielectric properties of Ba(Zn_1/3Ta_2/3)O₃ (BZT) ceramics was investigated. The 1:2 ordered hexagonal structure disappeared with the addition of Ga₂O₃. The average grain size of BZT increased with the addition of Ga₂O₃, which was attributed to the liquid phase formation. The liquid phase contains high concentrations of Ba and Ga ions. The relative density of the specimen increased with the addition of a small amount of Ga₂O₃ but it decreased when the Ga₂O₃ content was increased. Variation of the dielectric constant with Ga₂O₃ addition was similar to that of the relative density and ranged between 27 and 29. The temperature coefficient of resonant frequency decreased with increasing Ga₂O₃. The Q × f value of BZT was about 88,000 GHz and it significantly improved with the addition of Ga₂O₃. The maximum Q × f value achieved in this investigation was about 161,000 GHz for the BZT with 1.0 mol% Ga₂O₃ sintered at 1550°C for 10 h.

Original language	English
Pages (from-to)	702-706
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	2 A
DOIs	https://doi.org/10.1143/jjap.41.702
Publication status	Published - 2002 Feb

Keywords

Ba(ZnTa)O
Dielectric constant
GaO
Q × f value
Temperature coefficient of resonant frequency

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.41.702

Cite this

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title = "Effect of Ga2O3 on microstructure and microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics",

abstract = "The effect of Ga2O3 on the microstructure and microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 (BZT) ceramics was investigated. The 1:2 ordered hexagonal structure disappeared with the addition of Ga2O3. The average grain size of BZT increased with the addition of Ga2O3, which was attributed to the liquid phase formation. The liquid phase contains high concentrations of Ba and Ga ions. The relative density of the specimen increased with the addition of a small amount of Ga2O3 but it decreased when the Ga2O3 content was increased. Variation of the dielectric constant with Ga2O3 addition was similar to that of the relative density and ranged between 27 and 29. The temperature coefficient of resonant frequency decreased with increasing Ga2O3. The Q × f value of BZT was about 88,000 GHz and it significantly improved with the addition of Ga2O3. The maximum Q × f value achieved in this investigation was about 161,000 GHz for the BZT with 1.0 mol% Ga2O3 sintered at 1550°C for 10 h.",

keywords = "Ba(ZnTa)O, Dielectric constant, GaO, Q × f value, Temperature coefficient of resonant frequency",

author = "Yang, {Jung In} and Sahn Nahm and Choi, {Chang Hack} and Lee, {Hwack Joo} and Kim, {Jae Cheon} and Park, {Hyun Min}",

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AU - Yang, Jung In

AU - Nahm, Sahn

AU - Choi, Chang Hack

AU - Lee, Hwack Joo

AU - Kim, Jae Cheon

AU - Park, Hyun Min

PY - 2002/2

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N2 - The effect of Ga2O3 on the microstructure and microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 (BZT) ceramics was investigated. The 1:2 ordered hexagonal structure disappeared with the addition of Ga2O3. The average grain size of BZT increased with the addition of Ga2O3, which was attributed to the liquid phase formation. The liquid phase contains high concentrations of Ba and Ga ions. The relative density of the specimen increased with the addition of a small amount of Ga2O3 but it decreased when the Ga2O3 content was increased. Variation of the dielectric constant with Ga2O3 addition was similar to that of the relative density and ranged between 27 and 29. The temperature coefficient of resonant frequency decreased with increasing Ga2O3. The Q × f value of BZT was about 88,000 GHz and it significantly improved with the addition of Ga2O3. The maximum Q × f value achieved in this investigation was about 161,000 GHz for the BZT with 1.0 mol% Ga2O3 sintered at 1550°C for 10 h.

AB - The effect of Ga2O3 on the microstructure and microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 (BZT) ceramics was investigated. The 1:2 ordered hexagonal structure disappeared with the addition of Ga2O3. The average grain size of BZT increased with the addition of Ga2O3, which was attributed to the liquid phase formation. The liquid phase contains high concentrations of Ba and Ga ions. The relative density of the specimen increased with the addition of a small amount of Ga2O3 but it decreased when the Ga2O3 content was increased. Variation of the dielectric constant with Ga2O3 addition was similar to that of the relative density and ranged between 27 and 29. The temperature coefficient of resonant frequency decreased with increasing Ga2O3. The Q × f value of BZT was about 88,000 GHz and it significantly improved with the addition of Ga2O3. The maximum Q × f value achieved in this investigation was about 161,000 GHz for the BZT with 1.0 mol% Ga2O3 sintered at 1550°C for 10 h.

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KW - Temperature coefficient of resonant frequency

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