Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

Dong Joon Kim; Yong Tae Moon; Keun Man Song; In Hwan Lee; Seong Ju Park

doi:10.1007/s11664-001-0107-y

Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

Dong Joon Kim, Yong Tae Moon, Keun Man Song, In Hwan Lee, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate in the MOCVD system.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Journal of Electronic Materials
Volume	30
Issue number	2
DOIs	https://doi.org/10.1007/s11664-001-0107-y
Publication status	Published - 2001 Feb
Externally published	Yes

Bibliographical note

Funding Information:
This work was partially supported by a grant from the Ministry of Science and Technology and the BK21 program in Korea.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-001-0107-y

Cite this

@article{586d5f3c27de4619974be9adf45030f9,

title = "Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD",

abstract = "The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate in the MOCVD system.",

author = "Kim, {Dong Joon} and Moon, {Yong Tae} and Song, {Keun Man} and Lee, {In Hwan} and Park, {Seong Ju}",

note = "Funding Information: This work was partially supported by a grant from the Ministry of Science and Technology and the BK21 program in Korea.",

year = "2001",

month = feb,

doi = "10.1007/s11664-001-0107-y",

language = "English",

volume = "30",

pages = "99--102",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

AU - Kim, Dong Joon

AU - Moon, Yong Tae

AU - Song, Keun Man

AU - Lee, In Hwan

AU - Park, Seong Ju

N1 - Funding Information: This work was partially supported by a grant from the Ministry of Science and Technology and the BK21 program in Korea.

PY - 2001/2

Y1 - 2001/2

N2 - The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate in the MOCVD system.

AB - The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition (MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate in the MOCVD system.

UR - http://www.scopus.com/inward/record.url?scp=0035251389&partnerID=8YFLogxK

U2 - 10.1007/s11664-001-0107-y

DO - 10.1007/s11664-001-0107-y

M3 - Article

AN - SCOPUS:0035251389

SN - 0361-5235

VL - 30

SP - 99

EP - 102

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 2

ER -

Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this