Abstract
This study examined the effect of deposition temperature on the electrical and the optical properties of thin-film hydrogenated zinc oxide doped with aluminum (AZO:H) fabricated by radio frequency magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO:H films were prepared on glass over a substrate temperature range from room temperature to 250 °C. The intentional incorporation of hydrogen was shown to play an important role in the electrical properties of the AZO:H films by increasing the free carrier concentration. The addition of 2 % H2 in Ar at a growth temperature of 150 °C produced an AZO:H film with excellent electrical properties and a resistivity of 3.21 × 10-4 Ω·cm. The UV-measurements showed that the optical transmission of the AZO:H films was above 86 % in the visible range with a wide optical band gap.
Original language | English |
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Pages (from-to) | 282-287 |
Number of pages | 6 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 Jul |
Keywords
- Al-doped ZnO
- Hydrogenated
- Rf magnetron sputter
- TCO
ASJC Scopus subject areas
- General Physics and Astronomy