Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films

Sung Ju Tark, Min Gu Kang, Seung Hoon Lee, Won Mok Kim, Hee Jin Lim, Donghwan Kim

Research output: Contribution to journalArticlepeer-review


This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200°C. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150°C, resistivity of 3.21×10-4 Ω cm, mobility of 21.9 CM2/V-s, electric charge carrier concentration of 9.35×1020 CM-3 was obtained. The AZO: H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

Original languageEnglish
Pages (from-to)629-633
Number of pages5
JournalKorean Journal of Materials Research
Issue number12
Publication statusPublished - 2007 Dec


  • Al-doped ZnO
  • Hydrogenated
  • Rf magnetron sputter
  • TCO

ASJC Scopus subject areas

  • Materials Science(all)


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