Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films

Sung Ju Tark; Min Gu Kang; Seung Hoon Lee; Won Mok Kim; Hee Jin Lim; Donghwan Kim

doi:10.3740/MRSK.2007.17.12.629

Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films

Sung Ju Tark, Min Gu Kang, Seung Hoon Lee, Won Mok Kim, Hee Jin Lim, Donghwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al₂O₃). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200°C. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H₂ addition at the growth temperature of 150°C, resistivity of 3.21×10^-4 Ω cm, mobility of 21.9 CM²/V-s, electric charge carrier concentration of 9.35×10²⁰ CM^-3 was obtained. The AZO: H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

Original language	English
Pages (from-to)	629-633
Number of pages	5
Journal	Korean Journal of Materials Research
Volume	17
Issue number	12
DOIs	https://doi.org/10.3740/MRSK.2007.17.12.629
Publication status	Published - 2007 Dec

Keywords

Al-doped ZnO
Hydrogenated
Rf magnetron sputter
TCO

ASJC Scopus subject areas

Materials Science(all)

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10.3740/MRSK.2007.17.12.629

Cite this

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title = "Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films",

abstract = "This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200°C. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150°C, resistivity of 3.21×10-4 Ω cm, mobility of 21.9 CM2/V-s, electric charge carrier concentration of 9.35×1020 CM-3 was obtained. The AZO: H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.",

keywords = "Al-doped ZnO, Hydrogenated, Rf magnetron sputter, TCO",

author = "Tark, {Sung Ju} and Kang, {Min Gu} and Lee, {Seung Hoon} and Kim, {Won Mok} and Lim, {Hee Jin} and Donghwan Kim",

year = "2007",

month = dec,

doi = "10.3740/MRSK.2007.17.12.629",

language = "English",

volume = "17",

pages = "629--633",

journal = "Korean Journal of Materials Research",

issn = "1225-0562",

publisher = "The Korea Federation of Science and Technology",

number = "12",

}

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T1 - Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films

AU - Tark, Sung Ju

AU - Kang, Min Gu

AU - Lee, Seung Hoon

AU - Kim, Won Mok

AU - Lim, Hee Jin

AU - Kim, Donghwan

PY - 2007/12

Y1 - 2007/12

N2 - This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200°C. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150°C, resistivity of 3.21×10-4 Ω cm, mobility of 21.9 CM2/V-s, electric charge carrier concentration of 9.35×1020 CM-3 was obtained. The AZO: H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

AB - This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to 200°C. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% H2 addition at the growth temperature of 150°C, resistivity of 3.21×10-4 Ω cm, mobility of 21.9 CM2/V-s, electric charge carrier concentration of 9.35×1020 CM-3 was obtained. The AZO: H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

KW - Al-doped ZnO

KW - Hydrogenated

KW - Rf magnetron sputter

KW - TCO

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SN - 1225-0562

VL - 17

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EP - 633

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

IS - 12

ER -

Effect of growth temperature on the properties of hydrogenation Al-doped ZnO films

Abstract

Keywords

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