Effect of H 2 sputter gas on interfacial mixing in spin valves

Whang Gi Ahn, Seong Rae Lee

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    We introduced the use of hydrogen during the deposition of spin valves to achieve better control of interfacial mixing, especially for bottom spin valves (B-SV). The hydrogen was introduced during deposition of the CoFe or IrMn layer depending on whether it was a B-SV or a top spin valve (T-SV). The magnetoresistance ratio and Hex increased to 15% and 30%, respectively, when hydrogen (10 vol %) was introduced for a B-SV. By contrast, the hydrogen effect for a T-SV was small. Using hydrogen (10 vol %), the surface of the SV was smoother (1.01 nm) than without hydrogen (1.94 nm). In addition, the SV with hydrogen had a well-developed (111) texture and larger grains. By introducing hydrogen, we could control the microstructure and reduce the intermixing between CoFe and IrMn, especially for B-SVs.

    Original languageEnglish
    Article number10N707
    JournalJournal of Applied Physics
    Volume97
    Issue number10
    DOIs
    Publication statusPublished - 2005 May 15

    Bibliographical note

    Funding Information:
    This work supported by the Korea Ministry of Science and Technology under the National Research Laboratory program the Korea Research Foundation Grant (KRF-2004-005-C00068).

    ASJC Scopus subject areas

    • General Physics and Astronomy

    Fingerprint

    Dive into the research topics of 'Effect of H 2 sputter gas on interfacial mixing in spin valves'. Together they form a unique fingerprint.

    Cite this