Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate

Hyeonseok Woo, Yongcheol Jo, Jongmin Kim, Cheonghyun Roh, Junho Lee, H. Kim, H. Im, Cheol Koo Hahn, Jungho Park

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 μm of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Ω-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation.

Original languageEnglish
Pages (from-to)S98-S102
JournalCurrent Applied Physics
Issue numberSUPPL. 1
Publication statusPublished - 2014 Mar 14

Bibliographical note

Funding Information:
This work was supported by the “Power generation of Electricity Delivery” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of Knowledge Economy (No. 201110150017B ) and Seoul R&BD Program ( WR080951 ).


  • AlGaN/GaN Schottky barrier diode
  • Mobility degradation
  • Pulse mode measurement
  • Self-heating effect

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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