Abstract
Silicon was purified using fractional melting (FM), which is a more effective refining method than fractional solidification. Changes in the silicon microstructure during FM were observed using a scanning electron microscope (SEM) and an electron probe microanalyzer (EPMA). Purity of each sample was investigated using inductively coupled plasma atomic emission spectrometry (ICP-AES) to determine the effects of various heating rates on the efficiency of FM. A refining ratio of 97.28% was the best result that could be obtained for the sample that was heated at a rate of 15 °C/min. For the samples that were heated below 1390 °C lower heating rate resulted in higher refining efficiency. Acid-leaching yielded 99.98% pure silicon samples after FM.
Original language | English |
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Article number | 10MB04 |
Journal | Japanese journal of applied physics |
Volume | 52 |
Issue number | 10 PART2 |
DOIs | |
Publication status | Published - 2013 |
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy