Effect of humidity and thermal curing of polymer gate dielectrics on the electrical hysteresis of SnO2 nanowire field effect transistors

Sahngki Hong; Daeil Kim; Gyu Tae Kim; Jeong Sook Ha

doi:10.1063/1.3562950

Effect of humidity and thermal curing of polymer gate dielectrics on the electrical hysteresis of SnO₂ nanowire field effect transistors

Sahngki Hong
, Daeil Kim
, Gyu Tae Kim
, Jeong Sook Ha

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Electrical properties of SnO₂ nanowire (NW) field effect transistor (FET) with polyimide gate dielectrics, prepared by thermal curing of polyamic acid, were investigated. In particular, the effect of humidity and the thermal curing on the electrical hysteresis was systematically studied by taking Fourier-transform infrared spectra of polymer films. Slow polarization of hydroxyl groups/water molecules in the polymer film due to the insufficient curing and the absorbed water molecules under high humidity during the device fabrication was attributed to the hysteresis in the direction opposite to that observed in SnO₂ NW FET with SiO₂ gate dielectrics.

Original language	English
Article number	102906
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3562950
Publication status	Published - 2011 Mar 7

Bibliographical note

Funding Information:
This work was supported by National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (Grant Nos. ROA-2007-0056879, ROA-2005-2002369, and ROA-2010-0010374).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3562950

Cite this

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title = "Effect of humidity and thermal curing of polymer gate dielectrics on the electrical hysteresis of SnO2 nanowire field effect transistors",

abstract = "Electrical properties of SnO2 nanowire (NW) field effect transistor (FET) with polyimide gate dielectrics, prepared by thermal curing of polyamic acid, were investigated. In particular, the effect of humidity and the thermal curing on the electrical hysteresis was systematically studied by taking Fourier-transform infrared spectra of polymer films. Slow polarization of hydroxyl groups/water molecules in the polymer film due to the insufficient curing and the absorbed water molecules under high humidity during the device fabrication was attributed to the hysteresis in the direction opposite to that observed in SnO2 NW FET with SiO2 gate dielectrics.",

author = "Sahngki Hong and Daeil Kim and Kim, \{Gyu Tae\} and Ha, \{Jeong Sook\}",

note = "Funding Information: This work was supported by National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (Grant Nos. ROA-2007-0056879, ROA-2005-2002369, and ROA-2010-0010374).",

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AU - Hong, Sahngki

AU - Kim, Daeil

AU - Kim, Gyu Tae

AU - Ha, Jeong Sook

N1 - Funding Information: This work was supported by National Research Foundation grants funded by the Ministry of Education, Science and Technology, Korea (Grant Nos. ROA-2007-0056879, ROA-2005-2002369, and ROA-2010-0010374).

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Y1 - 2011/3/7

N2 - Electrical properties of SnO2 nanowire (NW) field effect transistor (FET) with polyimide gate dielectrics, prepared by thermal curing of polyamic acid, were investigated. In particular, the effect of humidity and the thermal curing on the electrical hysteresis was systematically studied by taking Fourier-transform infrared spectra of polymer films. Slow polarization of hydroxyl groups/water molecules in the polymer film due to the insufficient curing and the absorbed water molecules under high humidity during the device fabrication was attributed to the hysteresis in the direction opposite to that observed in SnO2 NW FET with SiO2 gate dielectrics.

AB - Electrical properties of SnO2 nanowire (NW) field effect transistor (FET) with polyimide gate dielectrics, prepared by thermal curing of polyamic acid, were investigated. In particular, the effect of humidity and the thermal curing on the electrical hysteresis was systematically studied by taking Fourier-transform infrared spectra of polymer films. Slow polarization of hydroxyl groups/water molecules in the polymer film due to the insufficient curing and the absorbed water molecules under high humidity during the device fabrication was attributed to the hysteresis in the direction opposite to that observed in SnO2 NW FET with SiO2 gate dielectrics.

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