Abstract
A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)2 precursor.
Original language | English |
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Pages (from-to) | 109-115 |
Number of pages | 7 |
Journal | Microelectronic Engineering |
Volume | 89 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan |
Keywords
- CVD
- Cu seed layer
- Cu(II) precursor
- Interconnect
- Thin film growth
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering