Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

Jong Mun Choi; Dohan Lee; Ji Hun Park; Chang Gyoun Kim; Taek Mo Chung; Baek Mann Kim; Dongjin Byun

doi:10.1016/j.mee.2011.08.009

Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)₂

Jong Mun Choi, Dohan Lee, Ji Hun Park, Chang Gyoun Kim, Taek Mo Chung, Baek Mann Kim, Dongjin Byun

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)₂ precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)₂ precursor.

Original language	English
Pages (from-to)	109-115
Number of pages	7
Journal	Microelectronic Engineering
Volume	89
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2011.08.009
Publication status	Published - 2012 Jan

Keywords

CVD
Cu seed layer
Cu(II) precursor
Interconnect
Thin film growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.08.009

Cite this

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title = "Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2",

abstract = "A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)2 precursor.",

keywords = "CVD, Cu seed layer, Cu(II) precursor, Interconnect, Thin film growth",

author = "Choi, {Jong Mun} and Dohan Lee and Park, {Ji Hun} and Kim, {Chang Gyoun} and Chung, {Taek Mo} and Kim, {Baek Mann} and Dongjin Byun",

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T1 - Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

AU - Choi, Jong Mun

AU - Lee, Dohan

AU - Park, Ji Hun

AU - Kim, Chang Gyoun

AU - Chung, Taek Mo

AU - Kim, Baek Mann

AU - Byun, Dongjin

PY - 2012/1

Y1 - 2012/1

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AB - A high quality Cu seed layer was successfully prepared by chemical vapor deposition (CVD) from the newly synthesized Cu(dmamb)2 precursor. The growth behavior of Cu thin film was systematically investigated, with particular focus on the effect of growth temperature and atmosphere on the Cu seed layer properties. The grain size of the Cu thin film was enhanced by hydrogen atmosphere and the residual impurity in the Cu thin film was effectively reduced. The resistivity of the Cu thin film depended on the grain size and impurity concentration. A Cu seed layer was successfully obtained with resistivity of 37 μ Ω cm and thickness of 27 nm. These results demonstrated the possibility of fabricating a high quality Cu seed layer by CVD using the Cu(dmamb)2 precursor.

KW - CVD

KW - Cu seed layer

KW - Cu(II) precursor

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KW - Thin film growth

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