Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

Hyun Ju Choi; Heung Taek Bae; Michael J. McNallan; Yong Ho Sohn; Dae Soon Lim

doi:10.1016/j.surfcoat.2009.05.023

Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

Hyun Ju Choi, Heung Taek Bae, Michael J. McNallan, Yong Ho Sohn, Dae Soon Lim

* Honorary professors

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl₂ and H₂ at 1000 °C for 20 h. The Raman intensity ratio, I_D/I_G, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp² carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp² bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H₂ content increased owing to the contribution from the C-H bond and the nano-size pore.

Original language	English
Pages (from-to)	1018-1021
Number of pages	4
Journal	Surface and Coatings Technology
Volume	204
Issue number	6-7
DOIs	https://doi.org/10.1016/j.surfcoat.2009.05.023
Publication status	Published - 2009 Dec 25

Keywords

Chlorination
Graphitization
Nanoindentation
Plasticity
Silicon carbide

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2009.05.023

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@article{06d8b0c76c754c25af77b2d2843cc066,

title = "Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films",

abstract = "In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.",

keywords = "Chlorination, Graphitization, Nanoindentation, Plasticity, Silicon carbide",

author = "Choi, {Hyun Ju} and Bae, {Heung Taek} and McNallan, {Michael J.} and Sohn, {Yong Ho} and Lim, {Dae Soon}",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea and by a Korea Research Foundation Grant [KRF-2008-357-D00116].",

year = "2009",

month = dec,

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doi = "10.1016/j.surfcoat.2009.05.023",

language = "English",

volume = "204",

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journal = "Surface and Coatings Technology",

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TY - JOUR

T1 - Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

AU - Choi, Hyun Ju

AU - Bae, Heung Taek

AU - McNallan, Michael J.

AU - Sohn, Yong Ho

AU - Lim, Dae Soon

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea and by a Korea Research Foundation Grant [KRF-2008-357-D00116].

PY - 2009/12/25

Y1 - 2009/12/25

N2 - In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.

AB - In this study, the effect of hydrogen on the structure and mechanical properties of carbon films produced by selective etching of monolithic SiC was examined. The process to produce carbon films from SiC (i.e., SiC-derived carbon, CDC) was carried out in a gas mixture of Cl2 and H2 at 1000 °C for 20 h. The Raman intensity ratio, ID/IG, where subscripts D and G refer to diamond and graphite, decreased as the hydrogen concentration in the gas mixture increased, indicating a decrease in the sp2 carbon cluster. XRD analysis also showed that the fraction of graphitization decreased as the hydrogen concentration increased. The addition of hydrogen that prevented the formation of graphite (sp2 bonding) also resulted in a reduction in the film thickness. The hardness and elastic modulus of the carbon films tended to decrease as the H2 content increased owing to the contribution from the C-H bond and the nano-size pore.

KW - Chlorination

KW - Graphitization

KW - Nanoindentation

KW - Plasticity

KW - Silicon carbide

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U2 - 10.1016/j.surfcoat.2009.05.023

DO - 10.1016/j.surfcoat.2009.05.023

M3 - Article

AN - SCOPUS:71849102931

SN - 0257-8972

VL - 204

SP - 1018

EP - 1021

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 6-7

ER -

Effect of hydrogen on the physical and mechanical properties of silicon carbide-derived carbon films

Abstract

Keywords

ASJC Scopus subject areas

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