Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes

Kyeong Heon Kim; Su Jin Kim; Sang Young Park; Tae Geun Kim

doi:10.1166/jnn.2015.11177

Effect of hydrogen post-annealing on transparent conductive ITO/Ga₂O₃ bi-layer films for deep ultraviolet light-emitting diodes

Kyeong Heon Kim, Su Jin Kim, Sang Young Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga₂O₃ bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples - an as-deposited sample and two samples post-annealed in N₂ gas and N₂-H₂ gas mixture - were prepared and annealed at different temperatures ranging from 100°C to 500°C for comparison. Among these samples, the sample annealed at 300°C in a mixture of N₂ and H₂ gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.

Original language	English
Pages (from-to)	7777-7780
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2015.11177
Publication status	Published - 2015 Oct

Keywords

Bi-layer
Deep-UV
GaO
ITO
Transparent conducting electrode

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2015.11177

Cite this

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title = "Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes",

abstract = "The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples - an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture - were prepared and annealed at different temperatures ranging from 100°C to 500°C for comparison. Among these samples, the sample annealed at 300°C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.",

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AB - The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples - an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture - were prepared and annealed at different temperatures ranging from 100°C to 500°C for comparison. Among these samples, the sample annealed at 300°C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.

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