The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples - an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture - were prepared and annealed at different temperatures ranging from 100°C to 500°C for comparison. Among these samples, the sample annealed at 300°C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.
Bibliographical notePublisher Copyright:
Copyright © 2015 American Scientific Publishers All rights reserved.
- Transparent conducting electrode
ASJC Scopus subject areas
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics