Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

J. Y. Hwang; S. Y. Lee; N. I. Lee; H. I. Yim; M. Y. Kim; W. C. Lee; J. R. Rhee; B. S. Chun; T. W. Kim; Y. K. Kim; S. S. Lee; D. G. Hwang; E. J. Ri

doi:10.1109/TMAG.2009.2018586

Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

J. Y. Hwang, S. Y. Lee, N. I. Lee, H. I. Yim, M. Y. Kim, W. C. Lee, J. R. Rhee, B. S. Chun, T. W. Kim, Y. K. Kim, S. S. Lee, D. G. Hwang, E. J. Ri

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co_70.5Fe_4.5Si ₁₅B₁₀ (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO_x/free-layer 7/A10_x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

Original language	English
Article number	4957738
Pages (from-to)	2396-2398
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2009.2018586
Publication status	Published - 2009 Jun

Keywords

Amorphous ferromagnetic
Bias voltage dependence
CoFeSiB
Magnetic tunnel junction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2009.2018586

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Hwang, J. Y., Lee, S. Y., Lee, N. I., Yim, H. I., Kim, M. Y., Lee, W. C., Rhee, J. R., Chun, B. S., Kim, T. W., Kim, Y. K., Lee, S. S., Hwang, D. G., & Ri, E. J. (2009). Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction. IEEE Transactions on Magnetics, 45(6), 2396-2398. [4957738]. https://doi.org/10.1109/TMAG.2009.2018586

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title = "Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction",

abstract = "The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.",

keywords = "Amorphous ferromagnetic, Bias voltage dependence, CoFeSiB, Magnetic tunnel junction",

author = "Hwang, {J. Y.} and Lee, {S. Y.} and Lee, {N. I.} and Yim, {H. I.} and Kim, {M. Y.} and Lee, {W. C.} and Rhee, {J. R.} and Chun, {B. S.} and Kim, {T. W.} and Kim, {Y. K.} and Lee, {S. S.} and Hwang, {D. G.} and Ri, {E. J.}",

note = "Funding Information: This work was supported by Grant R01-2006-000-10473-0 (2006) from the Basic Research Program of the Korea Science and Engineering Foundation (KOSEF).",

year = "2009",

month = jun,

doi = "10.1109/TMAG.2009.2018586",

language = "English",

volume = "45",

pages = "2396--2398",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

AU - Hwang, J. Y.

AU - Lee, S. Y.

AU - Lee, N. I.

AU - Yim, H. I.

AU - Kim, M. Y.

AU - Lee, W. C.

AU - Rhee, J. R.

AU - Chun, B. S.

AU - Kim, T. W.

AU - Kim, Y. K.

AU - Lee, S. S.

AU - Hwang, D. G.

AU - Ri, E. J.

N1 - Funding Information: This work was supported by Grant R01-2006-000-10473-0 (2006) from the Basic Research Program of the Korea Science and Engineering Foundation (KOSEF).

PY - 2009/6

Y1 - 2009/6

N2 - The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

AB - The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si 15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/A10x/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

KW - Amorphous ferromagnetic

KW - Bias voltage dependence

KW - CoFeSiB

KW - Magnetic tunnel junction

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U2 - 10.1109/TMAG.2009.2018586

DO - 10.1109/TMAG.2009.2018586

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ER -

Effect of interface roughness on magnetoresistance and magnetization switching in double-barrier magnetic tunnel junction

Abstract

Keywords

ASJC Scopus subject areas

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