Effect of interlayer exchange coupling on the curie temperature in Ga 1-xMnxAs trilayer structures

Shavkat U. Yuldashev; Yongmin Kim; Nayoung Kim; H. Im; Tae Won Kang; Sanghoon Lee; Yuji Sasaki; Xin Liu; Jacek K. Furdyna

doi:10.1143/JJAP.43.2093

Effect of interlayer exchange coupling on the curie temperature in Ga _1-xMn_xAs trilayer structures

Shavkat U. Yuldashev, Yongmin Kim, Nayoung Kim, H. Im, Tae Won Kang, Sanghoon Lee, Yuji Sasaki, Xin Liu, Jacek K. Furdyna

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai_1-xMn _xAs(Be)/GaAs/Ga_1-xMn_xAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga_0.954Mn_0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao_0.954Mn_0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

Original language	English
Pages (from-to)	2093-2096
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.2093
Publication status	Published - 2004 Apr

Keywords

Exchange coupling
Magnetic semiconductors
Magnetjc trilayer structures

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.43.2093

Cite this

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title = "Effect of interlayer exchange coupling on the curie temperature in Ga 1-xMnxAs trilayer structures",

abstract = "We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai1-xMn xAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao0.954Mn0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.",

keywords = "Exchange coupling, Magnetic semiconductors, Magnetjc trilayer structures",

author = "Yuldashev, {Shavkat U.} and Yongmin Kim and Nayoung Kim and H. Im and Kang, {Tae Won} and Sanghoon Lee and Yuji Sasaki and Xin Liu and Furdyna, {Jacek K.}",

year = "2004",

month = apr,

doi = "10.1143/JJAP.43.2093",

language = "English",

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T1 - Effect of interlayer exchange coupling on the curie temperature in Ga 1-xMnxAs trilayer structures

AU - Yuldashev, Shavkat U.

AU - Kim, Yongmin

AU - Kim, Nayoung

AU - Im, H.

AU - Kang, Tae Won

AU - Lee, Sanghoon

AU - Sasaki, Yuji

AU - Liu, Xin

AU - Furdyna, Jacek K.

PY - 2004/4

Y1 - 2004/4

N2 - We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai1-xMn xAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao0.954Mn0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

AB - We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai1-xMn xAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao0.954Mn0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

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