Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

L. M. Sparing; A. M. Mintairov; J. H. Hodak; I. B. Martini; G. V. Hartland; U. Bindley; S. Lee; J. K. Furdyna; J. L. Merz; G. L. Snider

doi:10.1063/1.372300

Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

L. M. Sparing, A. M. Mintairov, J. H. Hodak, I. B. Martini, G. V. Hartland, U. Bindley, S. Lee, J. K. Furdyna, J. L. Merz, G. L. Snider

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2 Citations (Scopus)

Abstract

Studies of the effects of reactive ion etching on molecular beam epitaxy grown Cd_xZn_1-xSe/ZnSe strained quantum wells (QWs) using photoluminescence (PL) and time-resolved reflectivity measurements are reported. The shallow (50 nm cap layer) QW samples exhibit a blueshift in their PL peak position as a function of etch voltage up to a certain point, after which the blueshift is reduced. The reduction in the blueshift of the PL spectrum is strongly correlated with a reduction in the carrier lifetimes measured by transient reflectivity. From these experiments we suggest that the initial blueshift is a result of ion damage at the surface interacting with strain in the QW. On the other hand, the reduced carrier lifetime at higher voltages is a result of more severe structural damage in the QW.

Original language	English
Pages (from-to)	3063-3067
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	6
DOIs	https://doi.org/10.1063/1.372300
Publication status	Published - 2000 Mar 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells",

abstract = "Studies of the effects of reactive ion etching on molecular beam epitaxy grown CdxZn1-xSe/ZnSe strained quantum wells (QWs) using photoluminescence (PL) and time-resolved reflectivity measurements are reported. The shallow (50 nm cap layer) QW samples exhibit a blueshift in their PL peak position as a function of etch voltage up to a certain point, after which the blueshift is reduced. The reduction in the blueshift of the PL spectrum is strongly correlated with a reduction in the carrier lifetimes measured by transient reflectivity. From these experiments we suggest that the initial blueshift is a result of ion damage at the surface interacting with strain in the QW. On the other hand, the reduced carrier lifetime at higher voltages is a result of more severe structural damage in the QW.",

author = "Sparing, {L. M.} and Mintairov, {A. M.} and Hodak, {J. H.} and Martini, {I. B.} and Hartland, {G. V.} and U. Bindley and S. Lee and Furdyna, {J. K.} and Merz, {J. L.} and Snider, {G. L.}",

year = "2000",

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doi = "10.1063/1.372300",

language = "English",

volume = "87",

pages = "3063--3067",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

AU - Sparing, L. M.

AU - Mintairov, A. M.

AU - Hodak, J. H.

AU - Martini, I. B.

AU - Hartland, G. V.

AU - Bindley, U.

AU - Lee, S.

AU - Furdyna, J. K.

AU - Merz, J. L.

AU - Snider, G. L.

PY - 2000/3/15

Y1 - 2000/3/15

N2 - Studies of the effects of reactive ion etching on molecular beam epitaxy grown CdxZn1-xSe/ZnSe strained quantum wells (QWs) using photoluminescence (PL) and time-resolved reflectivity measurements are reported. The shallow (50 nm cap layer) QW samples exhibit a blueshift in their PL peak position as a function of etch voltage up to a certain point, after which the blueshift is reduced. The reduction in the blueshift of the PL spectrum is strongly correlated with a reduction in the carrier lifetimes measured by transient reflectivity. From these experiments we suggest that the initial blueshift is a result of ion damage at the surface interacting with strain in the QW. On the other hand, the reduced carrier lifetime at higher voltages is a result of more severe structural damage in the QW.

AB - Studies of the effects of reactive ion etching on molecular beam epitaxy grown CdxZn1-xSe/ZnSe strained quantum wells (QWs) using photoluminescence (PL) and time-resolved reflectivity measurements are reported. The shallow (50 nm cap layer) QW samples exhibit a blueshift in their PL peak position as a function of etch voltage up to a certain point, after which the blueshift is reduced. The reduction in the blueshift of the PL spectrum is strongly correlated with a reduction in the carrier lifetimes measured by transient reflectivity. From these experiments we suggest that the initial blueshift is a result of ion damage at the surface interacting with strain in the QW. On the other hand, the reduced carrier lifetime at higher voltages is a result of more severe structural damage in the QW.

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U2 - 10.1063/1.372300

DO - 10.1063/1.372300

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

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