Abstract
Studies of the effects of reactive ion etching on molecular beam epitaxy grown CdxZn1-xSe/ZnSe strained quantum wells (QWs) using photoluminescence (PL) and time-resolved reflectivity measurements are reported. The shallow (50 nm cap layer) QW samples exhibit a blueshift in their PL peak position as a function of etch voltage up to a certain point, after which the blueshift is reduced. The reduction in the blueshift of the PL spectrum is strongly correlated with a reduction in the carrier lifetimes measured by transient reflectivity. From these experiments we suggest that the initial blueshift is a result of ion damage at the surface interacting with strain in the QW. On the other hand, the reduced carrier lifetime at higher voltages is a result of more severe structural damage in the QW.
Original language | English |
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Pages (from-to) | 3063-3067 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 87 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2000 Mar 15 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)