Effect of Ir(pq)2acac doping on CBP in phosphorescence organic light-emitting diodes

Inyeob Na; Song Eun Lee; Min Kyu Joo; Il Hoo Park; Jae Ik Song; Hyunphil Joo; Young Kwan Kim; Gyu Tae Kim

doi:10.1016/j.cap.2019.09.017

Effect of Ir(pq)₂acac doping on CBP in phosphorescence organic light-emitting diodes

Inyeob Na, Song Eun Lee, Min Kyu Joo, Il Hoo Park, Jae Ik Song, Hyunphil Joo, Young Kwan Kim, Gyu Tae Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Doping is one of the most powerful methods amongst the various performance improvement ways. Doping affects the energy levels of the host layer by the energy level of the dopant. This allows the energy bandgap to be adjusted to a desired level and thus generates light corresponding to that energy level. Alternatively, it can act as an energy barrier between the interfaces to change the flow of carriers. In this study, the voltage dependences of undoped and doped devices were observed. Bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)₂acac) was doped in 4,4′-N, N′-dicarbazole-biphenyl (CBP) as the emission layer. The light intensity changes with the doping concentration, and the efficiency was also studied. When a high voltage was applied, the effect of triplet-triplet annihilation (TTA) adversely affected the electron-hole recombination. We analyzed the optimal operating conditions and the effect of doping concentration on OLEDs.

Original language	English
Pages (from-to)	78-81
Number of pages	4
Journal	Current Applied Physics
Volume	20
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2019.09.017
Publication status	Published - 2020 Jan

Keywords

4,4′-N,N′-dicarbazole-biphenyl (CBP)
Doping
OLEDs
bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2(acac))

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2019.09.017

Cite this

@article{c24dd6810c4d4153adb963e4857f3500,

title = "Effect of Ir(pq)2acac doping on CBP in phosphorescence organic light-emitting diodes",

abstract = "Doping is one of the most powerful methods amongst the various performance improvement ways. Doping affects the energy levels of the host layer by the energy level of the dopant. This allows the energy bandgap to be adjusted to a desired level and thus generates light corresponding to that energy level. Alternatively, it can act as an energy barrier between the interfaces to change the flow of carriers. In this study, the voltage dependences of undoped and doped devices were observed. Bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2acac) was doped in 4,4′-N, N′-dicarbazole-biphenyl (CBP) as the emission layer. The light intensity changes with the doping concentration, and the efficiency was also studied. When a high voltage was applied, the effect of triplet-triplet annihilation (TTA) adversely affected the electron-hole recombination. We analyzed the optimal operating conditions and the effect of doping concentration on OLEDs.",

keywords = "4,4′-N,N′-dicarbazole-biphenyl (CBP), Doping, OLEDs, bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2(acac))",

author = "Inyeob Na and Lee, {Song Eun} and Joo, {Min Kyu} and Park, {Il Hoo} and Song, {Jae Ik} and Hyunphil Joo and Kim, {Young Kwan} and Kim, {Gyu Tae}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2015R1A6A1A03031833 ), NRF grant funded by the Korea government (MSIP) ( 2019R1C1C1003467 ), and Nano-Material Technology Development Program through the NRF funded by Ministry of Science and ICT ( NRF-2017M3A7B4049119 ). Publisher Copyright: {\textcopyright} 2019",

year = "2020",

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AU - Na, Inyeob

AU - Lee, Song Eun

AU - Joo, Min Kyu

AU - Park, Il Hoo

AU - Song, Jae Ik

AU - Joo, Hyunphil

AU - Kim, Young Kwan

AU - Kim, Gyu Tae

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2015R1A6A1A03031833 ), NRF grant funded by the Korea government (MSIP) ( 2019R1C1C1003467 ), and Nano-Material Technology Development Program through the NRF funded by Ministry of Science and ICT ( NRF-2017M3A7B4049119 ). Publisher Copyright: © 2019

PY - 2020/1

Y1 - 2020/1

N2 - Doping is one of the most powerful methods amongst the various performance improvement ways. Doping affects the energy levels of the host layer by the energy level of the dopant. This allows the energy bandgap to be adjusted to a desired level and thus generates light corresponding to that energy level. Alternatively, it can act as an energy barrier between the interfaces to change the flow of carriers. In this study, the voltage dependences of undoped and doped devices were observed. Bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2acac) was doped in 4,4′-N, N′-dicarbazole-biphenyl (CBP) as the emission layer. The light intensity changes with the doping concentration, and the efficiency was also studied. When a high voltage was applied, the effect of triplet-triplet annihilation (TTA) adversely affected the electron-hole recombination. We analyzed the optimal operating conditions and the effect of doping concentration on OLEDs.

AB - Doping is one of the most powerful methods amongst the various performance improvement ways. Doping affects the energy levels of the host layer by the energy level of the dopant. This allows the energy bandgap to be adjusted to a desired level and thus generates light corresponding to that energy level. Alternatively, it can act as an energy barrier between the interfaces to change the flow of carriers. In this study, the voltage dependences of undoped and doped devices were observed. Bis(2-phenylquinoline) iridium(III) (acetylacetonate) (Ir(pq)2acac) was doped in 4,4′-N, N′-dicarbazole-biphenyl (CBP) as the emission layer. The light intensity changes with the doping concentration, and the efficiency was also studied. When a high voltage was applied, the effect of triplet-triplet annihilation (TTA) adversely affected the electron-hole recombination. We analyzed the optimal operating conditions and the effect of doping concentration on OLEDs.

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