Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices

S. J. Chung, S. Lee, I. W. Park, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Issue number1
Publication statusPublished - 2005

Bibliographical note

Funding Information:
This work was supported by the DARPA/SpinS Program through the Office of Naval Research; by NSF Grant DMR02-45227; and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.


  • Ferromagnetic Semiconductor
  • GaMnAs
  • Magnetization
  • Superlattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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