Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices

S. J. Chung; S. Lee; I. W. Park; X. Liu; J. K. Furdyna

doi:10.1007/s10948-005-2157-5

Effect of low temperature annealing on the magnetic properties of Ga _1-xMn_xAs/GaAs superlattices

S. J. Chung, S. Lee, I. W. Park, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have studied the effect of low-temperature (LT) annealing on the properties of Ga_1-xMn_xAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (H_C) three times larger than the undoped SL, and showed a much more robust remanent magnetization (M_r). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of M_r in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

Original language	English
Pages (from-to)	93-96
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s10948-005-2157-5
Publication status	Published - 2005

Keywords

Ferromagnetic Semiconductor
GaMnAs
Magnetization
Superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1007/s10948-005-2157-5

Cite this

@article{c879e9836e8240398e6a973df796851c,

title = "Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices",

abstract = "We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.",

keywords = "Ferromagnetic Semiconductor, GaMnAs, Magnetization, Superlattices",

author = "Chung, {S. J.} and S. Lee and Park, {I. W.} and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by the DARPA/SpinS Program through the Office of Naval Research; by NSF Grant DMR02-45227; and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.",

year = "2005",

doi = "10.1007/s10948-005-2157-5",

language = "English",

volume = "18",

pages = "93--96",

journal = "Journal of Superconductivity and Novel Magnetism",

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TY - JOUR

T1 - Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices

AU - Chung, S. J.

AU - Lee, S.

AU - Park, I. W.

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by the DARPA/SpinS Program through the Office of Naval Research; by NSF Grant DMR02-45227; and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.

PY - 2005

Y1 - 2005

N2 - We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

AB - We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

KW - Ferromagnetic Semiconductor

KW - GaMnAs

KW - Magnetization

KW - Superlattices

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