Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices

S. J. Chung; S. Lee; I. W. Park; X. Liu; J. K. Furdyna

doi:10.1007/s10948-005-2157-5

Effect of low temperature annealing on the magnetic properties of Ga _1-xMn_xAs/GaAs superlattices

S. J. Chung^*
, S. Lee
, I. W. Park
, X. Liu
, J. K. Furdyna

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have studied the effect of low-temperature (LT) annealing on the properties of Ga_1-xMn_xAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (H_C) three times larger than the undoped SL, and showed a much more robust remanent magnetization (M_r). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of M_r in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

Original language	English
Pages (from-to)	93-96
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s10948-005-2157-5
Publication status	Published - 2005

Bibliographical note

Funding Information:
This work was supported by the DARPA/SpinS Program through the Office of Naval Research; by NSF Grant DMR02-45227; and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.

Keywords

Ferromagnetic Semiconductor
GaMnAs
Magnetization
Superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1007/s10948-005-2157-5

Cite this

@article{c879e9836e8240398e6a973df796851c,

title = "Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices",

abstract = "We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.",

keywords = "Ferromagnetic Semiconductor, GaMnAs, Magnetization, Superlattices",

author = "Chung, \{S. J.\} and S. Lee and Park, \{I. W.\} and X. Liu and Furdyna, \{J. K.\}",

note = "Funding Information: This work was supported by the DARPA/SpinS Program through the Office of Naval Research; by NSF Grant DMR02-45227; and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.",

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doi = "10.1007/s10948-005-2157-5",

language = "English",

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journal = "Journal of Superconductivity and Novel Magnetism",

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T1 - Effect of low temperature annealing on the magnetic properties of Ga 1-xMnxAs/GaAs superlattices

AU - Chung, S. J.

AU - Lee, S.

AU - Park, I. W.

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by the DARPA/SpinS Program through the Office of Naval Research; by NSF Grant DMR02-45227; and by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.

PY - 2005

Y1 - 2005

N2 - We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

AB - We have studied the effect of low-temperature (LT) annealing on the properties of Ga1-xMnxAs/GaAs superlattices (SLs). One SL contained GaAs layers doped by Be (which acts as a p-type dopant), while the GaAs layers of the other SL were undoped. The Be-doped SL exhibited a coercive field (HC) three times larger than the undoped SL, and showed a much more robust remanent magnetization (Mr). While the effect of LT annealing on the undoped SL was relatively minor, magnetic properties of the Be-doped SL changed significantly after annealing. The coercive field of the Be-doped SL was reduced about three times, becoming comparable to that of the undoped SL. After annealing the temperature dependence of Mr in the Be-doped SL also became similar to the undoped SL. We discuss the effect of LT annealing on the magnetic properties of the two SL systems in terms of inter-diffusion of carriers, and of the reduced sensitivity to annealing characteristic of capped structures.

KW - Ferromagnetic Semiconductor

KW - GaMnAs

KW - Magnetization

KW - Superlattices

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