Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Kyung Jin Lee, Taek Dong Lee

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

    Original languageEnglish
    Pages (from-to)104-107
    Number of pages4
    JournalJournal of Magnetics
    Volume14
    Issue number3
    DOIs
    Publication statusPublished - 2009

    Keywords

    • Current-induced magnetization switching
    • Magnetic random access memory
    • Micromagnetics
    • Perpendicular magnetic anisotropy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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