Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim; Kyung Jin Lee; Taek Dong Lee

doi:10.4283/JMAG.2009.14.3.104

Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

Woojin Kim, Kyung Jin Lee, Taek Dong Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (M_s) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing M_s of PELs and decreasing interlayer exchange coupling.

Original language	English
Pages (from-to)	104-107
Number of pages	4
Journal	Journal of Magnetics
Volume	14
Issue number	3
DOIs	https://doi.org/10.4283/JMAG.2009.14.3.104
Publication status	Published - 2009

Keywords

Current-induced magnetization switching
Magnetic random access memory
Micromagnetics
Perpendicular magnetic anisotropy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.4283/JMAG.2009.14.3.104

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title = "Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers",

abstract = "The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.",

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AU - Kim, Woojin

AU - Lee, Kyung Jin

AU - Lee, Taek Dong

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Y1 - 2009

N2 - The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

AB - The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (Ms) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing Ms of PELs and decreasing interlayer exchange coupling.

KW - Current-induced magnetization switching

KW - Magnetic random access memory

KW - Micromagnetics

KW - Perpendicular magnetic anisotropy

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ER -

Effect of magnetic property modification on current-induced magnetization switching with perpendicular magnetic layers and polarization-enhancement layers

Abstract

Keywords

ASJC Scopus subject areas

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