TY - JOUR
T1 - Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices
AU - Kim, Tae Wook
AU - Oh, Seung Hwan
AU - Lee, Joonmyoung
AU - Choi, Hyejung
AU - Wang, Gunuk
AU - Park, Jubong
AU - Kim, Dong Yu
AU - Hwang, Hyunsang
AU - Lee, Takhee
N1 - Funding Information:
This work was supported by the National Research Laboratory (NRL) Programs of the Korea Science and Engineering Foundation (KOSEF), the Program for Integrated Molecular System at GIST and the SystemIC2010 project of the Korea Ministry of Knowledge Economy.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2010/1
Y1 - 2010/1
N2 - We investigated the switching behavior of the polyfluorene-derivatives (WPF-oxy-F) with and without metal ions (Ca2+ and Na+). Basic memory behavior (e.g., current-voltage sweep, cumulative probability and retention) was not significantly affected by the metal ions, and the materials displayed an on/off ratio of more than three orders of magnitude, as well as good device-to-device uniformity and >104 s of retention time. However, the threshold voltage of Na-WPF-oxy-F containing Na+ was found to be lower than that of Ca-WPF-oxy-F containing Ca2+, due to the looser binding between the sodium ion and the ethylene oxide unit in Na-WPF-oxy-F. Both Ca-WPF-oxy-F and Na-WPF-oxy-F showed area dependence in the low resistance state, implying that localized current flow is assisted by metal ions. In addition, the response time of Ca- and Na-WPF-oxy-F was faster than that of WPF-oxy-F, suggesting possible modulation of memory performance by the addition of metal ions in the polymer layer.
AB - We investigated the switching behavior of the polyfluorene-derivatives (WPF-oxy-F) with and without metal ions (Ca2+ and Na+). Basic memory behavior (e.g., current-voltage sweep, cumulative probability and retention) was not significantly affected by the metal ions, and the materials displayed an on/off ratio of more than three orders of magnitude, as well as good device-to-device uniformity and >104 s of retention time. However, the threshold voltage of Na-WPF-oxy-F containing Na+ was found to be lower than that of Ca-WPF-oxy-F containing Ca2+, due to the looser binding between the sodium ion and the ethylene oxide unit in Na-WPF-oxy-F. Both Ca-WPF-oxy-F and Na-WPF-oxy-F showed area dependence in the low resistance state, implying that localized current flow is assisted by metal ions. In addition, the response time of Ca- and Na-WPF-oxy-F was faster than that of WPF-oxy-F, suggesting possible modulation of memory performance by the addition of metal ions in the polymer layer.
KW - Metal ion
KW - Organic memory device
KW - Polyfluorene
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U2 - 10.1016/j.orgel.2009.10.006
DO - 10.1016/j.orgel.2009.10.006
M3 - Article
AN - SCOPUS:72649106294
SN - 1566-1199
VL - 11
SP - 109
EP - 114
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
IS - 1
ER -