Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Juhan Ahn; Jeong Kyu Kim; Sun Woo Kim; Gwang Sik Kim; Changhwan Shin; Jong Kook Kim; Byung Jin Cho; Hyun Yong Yu

doi:10.1109/LED.2016.2553132

Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Juhan Ahn, Jeong Kyu Kim, Sun Woo Kim, Gwang Sik Kim, Changhwan Shin, Jong Kook Kim, Byung Jin Cho, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρc) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n⁺-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n⁺-IL generate much lower ρc values (i.e., ~2 × 10^-9 ω · cm²) and are less prone to variation. In addition, the impact of ρc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n⁺-IL can achieve much lower current variation and a higher ON-state drive current.

Original language	English
Article number	7451242
Pages (from-to)	705-708
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/LED.2016.2553132
Publication status	Published - 2016 Jun

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

CMOS
FinFET
germanium
interlayer
specific contact resistivity
tantalum nitride
variation
workfunction
zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2016.2553132

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@article{ca0b8d17089b4cb9bb285dc7cfc9e5c5,

title = "Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET",

abstract = "A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρc) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n+-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n+-IL generate much lower ρc values (i.e., ~2 × 10-9 ω · cm2) and are less prone to variation. In addition, the impact of ρc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n+-IL can achieve much lower current variation and a higher ON-state drive current.",

keywords = "CMOS, FinFET, germanium, interlayer, specific contact resistivity, tantalum nitride, variation, workfunction, zinc oxide",

author = "Juhan Ahn and Kim, {Jeong Kyu} and Kim, {Sun Woo} and Kim, {Gwang Sik} and Changhwan Shin and Kim, {Jong Kook} and Cho, {Byung Jin} and Yu, {Hyun Yong}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2016",

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doi = "10.1109/LED.2016.2553132",

language = "English",

volume = "37",

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AU - Ahn, Juhan

AU - Kim, Jeong Kyu

AU - Kim, Sun Woo

AU - Kim, Gwang Sik

AU - Shin, Changhwan

AU - Kim, Jong Kook

AU - Cho, Byung Jin

AU - Yu, Hyun Yong

PY - 2016/6

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N2 - A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρc) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n+-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n+-IL generate much lower ρc values (i.e., ~2 × 10-9 ω · cm2) and are less prone to variation. In addition, the impact of ρc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n+-IL can achieve much lower current variation and a higher ON-state drive current.

AB - A metal nitride-interlayer-semiconductor source/ drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (ρc) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n+-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n+-IL generate much lower ρc values (i.e., ~2 × 10-9 ω · cm2) and are less prone to variation. In addition, the impact of ρc variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n+-IL can achieve much lower current variation and a higher ON-state drive current.

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Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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