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Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET
Juhan Ahn, Jeong Kyu Kim, Sun Woo Kim, Gwang Sik Kim, Changhwan Shin, Jong Kook Kim, Byung Jin Cho, Hyun Yong Yu
Research output: Contribution to journal › Article › peer-review
3
Citations
(Scopus)