Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

Jae Hoon Jung; Byeong Kwon Ju; Hoon Kim; Myung Hwan Oh; Suk Jae Chung; Jin Jang

Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

Jae Hoon Jung, Byeong Kwon Ju, Hoon Kim, Myung Hwan Oh, Suk Jae Chung, Jin Jang

Research output: Contribution to conference › Paper › peer-review

Abstract

We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

Original language	English
Pages	276-280
Number of pages	5
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 1997 Aug 17 → 1997 Aug 21

Other

Other	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
City	Kyongju, Korea
Period	97/8/17 → 97/8/21

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

@conference{9fa281d68d1b468fae2702e6c94eeb7b,

title = "Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel",

abstract = "We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.",

author = "Jung, {Jae Hoon} and Ju, {Byeong Kwon} and Hoon Kim and Oh, {Myung Hwan} and Chung, {Suk Jae} and Jin Jang",

year = "1997",

language = "English",

pages = "276--280",

note = "Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 ; Conference date: 17-08-1997 Through 21-08-1997",

}

TY - CONF

T1 - Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

AU - Jung, Jae Hoon

AU - Ju, Byeong Kwon

AU - Kim, Hoon

AU - Oh, Myung Hwan

AU - Chung, Suk Jae

AU - Jang, Jin

PY - 1997

Y1 - 1997

N2 - We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

AB - We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

UR - http://www.scopus.com/inward/record.url?scp=0031339347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031339347&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031339347

SP - 276

EP - 280

T2 - Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97

Y2 - 17 August 1997 through 21 August 1997

ER -

Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

Abstract

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ASJC Scopus subject areas

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