Abstract
Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.
Original language | English |
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Pages (from-to) | 1099-1102 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 53 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2009 Oct |
Bibliographical note
Funding Information:This work is the outcome of a Manpower Development Program for Energy and Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).
Keywords
- GaN
- Green LED
- Nano-pattern
- Nanoimprint lithography
- Photoluminescence
- Photon extraction efficiency
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry