Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Eun Ju Hong; Kyeong Jae Byeon; Hyoungwon Park; Jaeyeon Hwang; Heon Lee; Kyungwoo Choi; Hyeong Seok Kim

doi:10.1016/j.sse.2009.05.007

Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Eun Ju Hong, Kyeong Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Hyeong Seok Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl₄ and Ar gases using SiO₂ as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.

Original language	English
Pages (from-to)	1099-1102
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2009.05.007
Publication status	Published - 2009 Oct

Keywords

GaN
Green LED
Nano-pattern
Nanoimprint lithography
Photoluminescence
Photon extraction efficiency

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2009.05.007

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@article{337b59c1a2bd49b686a1212fa675caa7,

title = "Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency",

abstract = "Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.",

keywords = "GaN, Green LED, Nano-pattern, Nanoimprint lithography, Photoluminescence, Photon extraction efficiency",

author = "Hong, {Eun Ju} and Byeon, {Kyeong Jae} and Hyoungwon Park and Jaeyeon Hwang and Heon Lee and Kyungwoo Choi and Kim, {Hyeong Seok}",

note = "Funding Information: This work is the outcome of a Manpower Development Program for Energy and Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).",

year = "2009",

month = oct,

doi = "10.1016/j.sse.2009.05.007",

language = "English",

volume = "53",

pages = "1099--1102",

journal = "Solid-State Electronics",

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T1 - Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

AU - Hong, Eun Ju

AU - Byeon, Kyeong Jae

AU - Park, Hyoungwon

AU - Hwang, Jaeyeon

AU - Lee, Heon

AU - Choi, Kyungwoo

AU - Kim, Hyeong Seok

N1 - Funding Information: This work is the outcome of a Manpower Development Program for Energy and Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

PY - 2009/10

Y1 - 2009/10

N2 - Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.

AB - Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.

KW - GaN

KW - Green LED

KW - Nano-pattern

KW - Nanoimprint lithography

KW - Photoluminescence

KW - Photon extraction efficiency

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Abstract

Keywords

ASJC Scopus subject areas

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