Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Eun Ju Hong; Kyeong Jae Byeon; Hyoungwon Park; Jaeyeon Hwang; Heon Lee; Kyungwoo Choi; Hyeong Seok Kim

doi:10.1016/j.sse.2009.05.007

Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Eun Ju Hong, Kyeong Jae Byeon, Hyoungwon Park, Jaeyeon Hwang, Heon Lee, Kyungwoo Choi, Hyeong Seok Kim

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl₄ and Ar gases using SiO₂ as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.

Original language	English
Pages (from-to)	1099-1102
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2009.05.007
Publication status	Published - 2009 Oct

Bibliographical note

Funding Information:
This work is the outcome of a Manpower Development Program for Energy and Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

Keywords

GaN
Green LED
Nano-pattern
Nanoimprint lithography
Photoluminescence
Photon extraction efficiency

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2009.05.007

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title = "Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency",

abstract = "Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.",

keywords = "GaN, Green LED, Nano-pattern, Nanoimprint lithography, Photoluminescence, Photon extraction efficiency",

author = "Hong, {Eun Ju} and Byeon, {Kyeong Jae} and Hyoungwon Park and Jaeyeon Hwang and Heon Lee and Kyungwoo Choi and Kim, {Hyeong Seok}",

note = "Funding Information: This work is the outcome of a Manpower Development Program for Energy and Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).",

year = "2009",

month = oct,

doi = "10.1016/j.sse.2009.05.007",

language = "English",

volume = "53",

pages = "1099--1102",

journal = "Solid-State Electronics",

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AU - Hong, Eun Ju

AU - Byeon, Kyeong Jae

AU - Park, Hyoungwon

AU - Hwang, Jaeyeon

AU - Lee, Heon

AU - Choi, Kyungwoo

AU - Kim, Hyeong Seok

N1 - Funding Information: This work is the outcome of a Manpower Development Program for Energy and Resources supported by the Ministry of Knowledge and Economy (MKE). This work is also supported by Seoul R&BD Program (NT080570M0211611).

PY - 2009/10

Y1 - 2009/10

N2 - Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.

AB - Various sized nano-patterns, ranging from 0.8 μm × 0.4 μm to 2.0 μm × 1.0 μm were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and Ar gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased.

KW - GaN

KW - Green LED

KW - Nano-pattern

KW - Nanoimprint lithography

KW - Photoluminescence

KW - Photon extraction efficiency

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Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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