Effect of Nb concentration on the microstructure of Al and the magneto resistive properties of the magnetic tunnel junction with a Nb-doped Al-oxide barrier

Sung Min Park; Ha Chang Chung; Seong Rae Lee

doi:10.1002/pssa.200777408

Effect of Nb concentration on the microstructure of Al and the magneto resistive properties of the magnetic tunnel junction with a Nb-doped Al-oxide barrier

Sung Min Park, Ha Chang Chung, Seong Rae Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb-alloyed Al-oxide (NbAlO _x) and analyzed the microstructure changes and electrical property of Nb alloyed Al-oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb-alloyed Al-oxide barrier increased up to 38.5 % at 9.26 at. % Nb. As the Nb concentration increases, the grain size decreases and the microstructure becomes a dense, fine equiaxed-type structure with fine, continuous selected area diffraction (SAD) patterns, until Nb concentration reaches 9 at. %. The microstructural changes of Nb-alloyed Al layer results in smooth interface roughness, so that we could achieve a high TMR ratio. Resistance decreased from 900 Ω to 220 Ω and barrier height decreased from 1.62 eV to 0.847 eV at 9.26 at. % Nb. We speculated that the reduction of junction resistance of the MTJ with Nb-doped Al-oxide barrier was due to Nb d states formation in the band gap.

Original language	English
Pages (from-to)	3938-3941
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	12
DOIs	https://doi.org/10.1002/pssa.200777408
Publication status	Published - 2007 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Surfaces and Interfaces

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10.1002/pssa.200777408

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Effect of Nb concentration on the microstructure of Al and the magneto resistive properties of the magnetic tunnel junction with a Nb-doped Al-oxide barrier. / Park, Sung Min; Chung, Ha Chang; Lee, Seong Rae.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 204, No. 12, 12.2007, p. 3938-3941.

Research output: Contribution to journal › Article › peer-review

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title = "Effect of Nb concentration on the microstructure of Al and the magneto resistive properties of the magnetic tunnel junction with a Nb-doped Al-oxide barrier",

abstract = "We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb-alloyed Al-oxide (NbAlO x) and analyzed the microstructure changes and electrical property of Nb alloyed Al-oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb-alloyed Al-oxide barrier increased up to 38.5 % at 9.26 at. % Nb. As the Nb concentration increases, the grain size decreases and the microstructure becomes a dense, fine equiaxed-type structure with fine, continuous selected area diffraction (SAD) patterns, until Nb concentration reaches 9 at. %. The microstructural changes of Nb-alloyed Al layer results in smooth interface roughness, so that we could achieve a high TMR ratio. Resistance decreased from 900 Ω to 220 Ω and barrier height decreased from 1.62 eV to 0.847 eV at 9.26 at. % Nb. We speculated that the reduction of junction resistance of the MTJ with Nb-doped Al-oxide barrier was due to Nb d states formation in the band gap.",

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AU - Chung, Ha Chang

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PY - 2007/12

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N2 - We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb-alloyed Al-oxide (NbAlO x) and analyzed the microstructure changes and electrical property of Nb alloyed Al-oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb-alloyed Al-oxide barrier increased up to 38.5 % at 9.26 at. % Nb. As the Nb concentration increases, the grain size decreases and the microstructure becomes a dense, fine equiaxed-type structure with fine, continuous selected area diffraction (SAD) patterns, until Nb concentration reaches 9 at. %. The microstructural changes of Nb-alloyed Al layer results in smooth interface roughness, so that we could achieve a high TMR ratio. Resistance decreased from 900 Ω to 220 Ω and barrier height decreased from 1.62 eV to 0.847 eV at 9.26 at. % Nb. We speculated that the reduction of junction resistance of the MTJ with Nb-doped Al-oxide barrier was due to Nb d states formation in the band gap.

AB - We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb-alloyed Al-oxide (NbAlO x) and analyzed the microstructure changes and electrical property of Nb alloyed Al-oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb-alloyed Al-oxide barrier increased up to 38.5 % at 9.26 at. % Nb. As the Nb concentration increases, the grain size decreases and the microstructure becomes a dense, fine equiaxed-type structure with fine, continuous selected area diffraction (SAD) patterns, until Nb concentration reaches 9 at. %. The microstructural changes of Nb-alloyed Al layer results in smooth interface roughness, so that we could achieve a high TMR ratio. Resistance decreased from 900 Ω to 220 Ω and barrier height decreased from 1.62 eV to 0.847 eV at 9.26 at. % Nb. We speculated that the reduction of junction resistance of the MTJ with Nb-doped Al-oxide barrier was due to Nb d states formation in the band gap.

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Effect of Nb concentration on the microstructure of Al and the magneto resistive properties of the magnetic tunnel junction with a Nb-doped Al-oxide barrier

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